CDLL4476

Series:	--
Packaging:	Bulk
Part Status:	Active
Voltage - Zener (Nom) (Vz):	30V
Tolerance:	±5%
Power - Max:	1.5W
Impedance (Max) (Zzt):	20 Ohms
Current - Reverse Leakage @ Vr:	50nA @ 24V
Voltage - Forward (Vf) (Max) @ If:	1V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	DO-213AB, MELF
Supplier Device Package:	DO-213AB

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Introduction

The CDLL4476 is a single Zener diode with a wide range of useful applications. This diode is composed of a highly reliable, rugged junction with a low voltage rating of 4.7V. It is a simple PN-junction diode which acts as a voltage regulator, protecting circuits from overvoltage transients. The CDLL4476 also acts as a limitation or protection device to limit the amount of voltage being applied, thus preventing circuit failures.

Physical Characteristics

The CDLL4476 is a conventional diode, with polarized monolithic construction that has very low leakage current. It has an EIA size of 0402 and comes with a 0Ω land pattern. The diode has a maximum forward voltage rating of 0.8V, a maximum continuous reverse voltage rating of 4.7V and a maximum power dissipation of 200mW. The junction temperature operating range is -65°C to + 160°C. The zener breakdown voltage is 4.7V and the zener clamping voltage is 4.35V.

Applications

The CDLL4476 can span a wide range of applications due to its low voltage rating and rugged junction. The diode can be used in a variety of circuits as a voltage regulator, power supply voltage limiter, over-voltage protection and ESD protection. It can be used in LED circuits and AC/DC circuit designs. It is also used in line protection and lightning strike protection applications.

Working Principle

The CDLL4476 operates on the principle of a PN-junction diode. The diode is composed of two doped layers, one P-doped layer and one N-doped layer. When a voltage is applied between the two layers, the negatively charged electrons from the N-layer will repel the positively charged holes from the P-layer. Thus a depletion region is created between the two layers. When the applied voltage passes a certain threshold, the depletion region becomes so thick that electrons and holes are able to recombine and so current begins to flow. The CDLL4476 behaves differently in forward and reverse bias. When forward biased, the diode has a low voltage drop, creating a path for current to flow. When reverse biased above the zener breakdown voltage, the diode acts as a voltage regulator, limiting the amount of voltage applied.

Conclusion

In conclusion, the CDLL4476 is a single Zener diode that is used for a wide range of applications. It is composed of a PN-junction diode which has a low voltage rating and a rugged junction. It acts as a voltage regulator, power supply voltage limiter, over-voltage protection and ESD protection device. Its working principle is based on the PN-junction diode which operates differently in forward and reverse bias.

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