CDLL5267A Allicdata Electronics
Allicdata Part #:

CDLL5267A-ND

Manufacturer Part#:

CDLL5267A

Price: $ 2.58
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 75V 10W DO213AB
More Detail: Zener Diode 75V 10mW ±10% Surface Mount DO-213AB
DataSheet: CDLL5267A datasheetCDLL5267A Datasheet/PDF
Quantity: 1000
264 +: $ 2.32518
Stock 1000Can Ship Immediately
$ 2.58
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±10%
Power - Max: 10mW
Impedance (Max) (Zzt): 270 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 56V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB
Description

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Diodes - Zener - Single: CDLL5267A Application Field and Working Principle

The CDLL5267A is a single zener diode made by ON Semiconductor (formerly ON Semiconductor). It has a wide range of applications and is used in many circuit designs. In this article, we will discuss the CDLL5267A application field and its working principle.

CDLL5267A Application Field

The CDLL5267A is a single silicon carbide lightly doped depletion (LDD) mode controlled avalanche breakdown (CAB) zener diode. It provides excellent protection for large transient over-voltage transients. It is suitable for a variety of applications, including Automotive spark ignition and general purpose power systems. It is used in the automotive industry for spark ignition for the control of the voltage spikes during high frequency switching. Additionally, its low capacitance design makes it suitable for radio frequency (RF) applications.

Working Principle

Zener diodes work on the principle of avalanche breakdown. It is an electronic breakdown effect used to regulate the flow of current between two electrodes in a reverse-biased diode junction. When a reverse voltage is applied on the zener diode, the number of carriers in the depletion region increases exponentially with increasing applied voltage. When the applied voltage reaches the zener breakdown voltage, the current flowing through the junction suddenly increases exponentially resulting in large current spikes. This is due to the increased number of carriers present in the junction.

The CDLL5267A is designed with a patented silicon carbide CAB process which ensures a low breakdown voltage and maximum capacitance. This allows for very low on-state voltage losses, making it particularly suitable for applications operating under high temperatures. Additionally, the breakdown voltage of the CDLL5267A is highly stable and predictable, making it suitable for power supply design and control applications.

Conclusion

The CDLL5267A is an excellent choice for many applications requiring reliable performance under high-voltage, high-temperature conditions. Its patented silicon carbide CAB process provides excellent thermal and breakdown voltage stability, as well as a very low on-state voltage loss. This makes it well suited for automotive, industrial, and general-purpose power systems.

The specific data is subject to PDF, and the above content is for reference

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