| Allicdata Part #: | CDLL5526B-ND |
| Manufacturer Part#: |
CDLL5526B |
| Price: | $ 4.66 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 6.8V 500MW DO213AB |
| More Detail: | Zener Diode 6.8V 500mW ±5% Surface Mount DO-213AB |
| DataSheet: | CDLL5526B Datasheet/PDF |
| Quantity: | 1000 |
| 146 +: | $ 4.19757 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 6.8V |
| Tolerance: | ±5% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 30 Ohms |
| Current - Reverse Leakage @ Vr: | 1µA @ 6.2V |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-213AB, MELF |
| Supplier Device Package: | DO-213AB |
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CDLL5526B Application Field and Working Principle
CDLL5526B devices are single Zener diodes found in a variety of application fields. The devices are manufactured from a gallium arsenide and phosphide material that deliver optimum performance. Utilizing the diode\'s planar construction, different application fields can be served, including communication, digital and analog circuits, Pulse applications, and automotive applications. The CDLL5526B also offers an optimum noise performance and low reverse leakage.
Features
- Low voltage: adjustable up to 48V
- High reverse current
- Low capacitance
- High conductance
- High temperature stability (up to 175°C)
- Compatible with a wide range of applications
Applications
CDLL5526B devices are commonly used in a variety of applications, including but not limited to:
- Bipolar and MOS transistor bias circuits
- High-speed switching circuits
- Protection against transient and electrical interference
- High-speed signal phase alteration
- Microprocessor power supplies
- TFT LCDs, displays, and monitors
- Light-emitting diodes (LEDs) and flash memory circuits
- Thyristor overvoltage protection
Working Principle
In general, a Zener diode is a reverse-biased PN junction diode with an adjustable breakdown threshold. When the reverse bias voltage of the diode exceeds this threshold, the diode begins to conduct current in the reverse direction with very low resistance. This low resistance is known as a Zener Breakdown. The breakdown voltage of a Zener diode can be adjusted by varying the built-in electric field in the semiconductor structure.
The CDLL5526B devices are made from a gallium arsenide and phosphide material, which makes them very efficient for regulating voltage. The breakdown voltage of the CDLL5526B devices is adjustable up to approximately 48V, depending upon the specific device. Furthermore, the device provides low capacitance and high conductance to ensure a wide range of operational conditions. This low capacitance also helps reduce acoustic noise, which is important in digital and pulse applications.
The high temperature stability of the CDLL5526B devices is another key benefit. The devices can operate at up to 175°C without significant affects on their performance. This makes them suitable for automotive applications as well as other applications with higher temperature environments.
In conclusion, the CDLL5526B family of Zener diodes provide an efficient and reliable solution for a wide range of applications. Their adjustable breakdown voltage, low capacitance, high temperature stability, and compatibility with a wide range of applications make them an excellent choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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CDLL5526B Datasheet/PDF