CDLL5546B Allicdata Electronics
Allicdata Part #:

CDLL5546B-ND

Manufacturer Part#:

CDLL5546B

Price: $ 4.66
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 33V 500MW DO213AB
More Detail: Zener Diode 33V 500mW ±5% Surface Mount DO-213AB
DataSheet: CDLL5546B datasheetCDLL5546B Datasheet/PDF
Quantity: 1000
146 +: $ 4.19757
Stock 1000Can Ship Immediately
$ 4.66
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 100 Ohms
Current - Reverse Leakage @ Vr: 10nA @ 29.7V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB
Description

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CDLL5546B application field and working principle

The CDLL5546B is a single Zener Diode with a low forward voltage drop and high stability over temperature. It is widely used for voltage regulation or as a protector in a wide range of applications from RF to communications and as a reference in test and measurement systems. The operating temperature range is from -65°C to 175°C, making it suitable for use in a variety of different environments. The diode has a reverse breakdown voltage of 5.6 V, a maximum forward current of 5 A, and a maximum reverse current of 3 nA.

Applications

The CDLL5546B is used in a variety of applications due to its low forward voltage drop, high stability over temperature and wide operating temperature range. It is ideal for use in applications such as:

  • Voltage regulation
  • Reference in test and measurement systems
  • RF and communication systems
  • Surge suppression
  • Radiation hardened applications

Working Principle

The operating principle of the CDLL5546B is based on the fact that when the diode is in the reverse-biased state, the depletion layer (the space between the two PN junctions) grows in size due to the electric field, creating an alignment of the electron and hole concentrations. This produces a potential barrier that the electrons and holes need to overcome in order to cross the junction, and this potential will eventually reach the Zener breakdown voltage, resulting in the flow of current through the diode.

In the forward-biased state, the electric field affects the majority charge carriers, resulting in the passage of current. As the diode is a sensitive component, the temperature variations can greatly influence the operating characteristics. This can be countered by placing a special temperature-compensating material within the diode structure.

The CDLL5546B is designed to provide a high degree of stability by using a very low forward voltage drop, allowing for lower overvoltage and greater protection against electrical conditions which result in current and power dissipation.

Conclusion

The CDLL5546B is a single Zener diode designed to meet the needs of a variety of applications. Its low forward voltage drop, high stability over temperature and wide operating temperature range make it a reliable and efficient means of regulation, protection and reference in numerous applications.

The specific data is subject to PDF, and the above content is for reference

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