| Allicdata Part #: | CDLL978-ND |
| Manufacturer Part#: |
CDLL978 |
| Price: | $ 2.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE ZENER 51V 500MW DO213AB |
| More Detail: | Zener Diode 51V 500mW ±20% Surface Mount DO-213AB |
| DataSheet: | CDLL978 Datasheet/PDF |
| Quantity: | 1000 |
| 329 +: | $ 1.86015 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Voltage - Zener (Nom) (Vz): | 51V |
| Tolerance: | ±20% |
| Power - Max: | 500mW |
| Impedance (Max) (Zzt): | 125 Ohms |
| Current - Reverse Leakage @ Vr: | 500nA @ 39V |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 200mA |
| Operating Temperature: | -65°C ~ 175°C |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-213AB, MELF |
| Supplier Device Package: | DO-213AB |
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CDLL978 Application Field and Working Principle
CDLL978 is a type of diode specifically designed for applications using Zener Voltage (also known as the avalanche breakdown mechanism). It\'s primarily used in high-power and high-voltage applications. The device is specifically designed to allow the breakdown voltage to remain relatively consistent over a wide range of input voltages.
Characterisitics
The CDLL978 is an array of four monolithic semiconductor rectifiers, each being individually tested for its breakdown voltage. It is specially designed to provide a wide range of breakdown voltages for high power and high voltage applications. The device utilizes an on-state voltage of 6KV, a maximum sustained power dissipation of 200 watts, and a maximum non-repetitive surge current rating of 1000 Amps.
Characteristics
The device is constructed using a metal nitride diode structure, which is a "PN-junction" metal semiconductor that is formed by combining two different polycrystalline materials. This structure provides a better two-terminal electrical conduction path than an isolator type diode, as it has a higher breakdown voltage and a lower leakage current. The metal nitride structure allows for much higher voltage ratings than a typical p-n junction diode.
Working Principle
The device works by creating a vertical conduction path between the anode and the cathode. This path is formed by a combination of avalanche breakdown and Zener Voltage. For avalanche breakdown to occur, the applied voltage must exceed the breakdown voltage of the PN junction. When this happens, a large voltage is developed across the junction, resulting in an electric current flowing from the anode to the cathode. This current is called the Zener voltage and, combined with the avalanche breakdown, helps to regulate the breakdown voltage over a wide range of input voltages, thus providing the stability needed for many high-power and high-voltage applications.
Applications
The CDLL978 is primarily used in applications that require a wide range of breakdown voltages. It is suitable for use in high-voltage/high-power applications such as RF power amplifiers, electrostatic imaging equipment, and power supplies. It is also used in applications such as high-frequency switching circuits and rectifiers. As the device can handle up to 6KV and a maximum of 1000 Amps, it is suitable for use in a variety of harsh environments.
The specific data is subject to PDF, and the above content is for reference
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CDLL978 Datasheet/PDF