CDNBS16-T08C Allicdata Electronics
Allicdata Part #:

CDNBS16-T08C-ND

Manufacturer Part#:

CDNBS16-T08C

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Bourns Inc.
Short Description: TVS DIODE 8V 26V 16SOIC
More Detail: N/A
DataSheet: CDNBS16-T08C datasheetCDNBS16-T08C Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Voltage - Clamping (Max) @ Ipp: 26V
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 15pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 500W
Current - Peak Pulse (10/1000µs): 30A (8/20µs)
Series: --
Voltage - Breakdown (Min): 8.5V
Voltage - Reverse Standoff (Typ): 8V
Bidirectional Channels: 8
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TVS – Diodes, such as the CDNBS16-T08C, provide efficient and reliable protection against Electrical Overload and EFT (electro-static and electrical transients) to a wide range of electronic devices used in a variety of industries.

The CDNBS16-T08C, for example, is a 16-pin, small form factor device rated to a maximum power of 400 Volts and 8Amp of current. It has a unique symmetrical spaced metal oxide varistor element protection layer that makes it particularly useful for applications such as storage, network interfaces and telecom applications. In addition, the device is tested to withstand ESD surges of up to 30kV, making it a reliable choice for high voltage applications.

The working principle of the CDNBS16-T08C can be described using the principle of charge storage over a resistive element. The device contains a junction between two oppositely doped semiconductor layers. This junction forms a depletion region, with a potential barrier. When an EFT (electro-static or electrical transient) event occurs, a "charge" is stored in the depletion region, allowing current to flow and dissipate the transient energy away.

The device is also designed to incorporate surge protection and impedance matching. It features a high-voltage suppressor (HVS) which helps to reduce the stress on the components by diverting transient currents away. Additionally, the impedance matching between the HVS and the device also helps to ensure that sufficient current is passed to dissipate the transient energy.

The CDNBS16-T08C is an ideal solution for protecting sensitive equipment from transients. It can be used in a wide range of applications, including storage, network interfaces, and telecom equipment, where transient protection is required. The device provides reliable protection against EFT (electro-static and electrical transients) and electrical overloading, making it a great choice for various applications.

The specific data is subject to PDF, and the above content is for reference

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