CDSV3-16-G

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Diodes play an important role in modern power electronics, as it has come to be realized that higher power operations require the ability to switch and rectify. The ability to switch and rectify influence power electronic devices greatly, particularly those operating at higher frequencies or requiring greater efficiency. Single-phase silicon controlled rectifier or SCR and insulated gate bipolar transistor or IGBT have been the popular choices, however due to economical benefits, the diode is still being used. Nowadays, semiconductor-based diodes act both as switches and rectifiers with very high performance. One such diode is the CDSV3-16-G, which is a single-phase, semi-insulated, non-repetitive, fast-recovery, low loss, PN-junction, ultrafast "Hyperfast" Rectifier that can support peak forward surge current up to 32A.

The CDSV3-16-G diode is used for applications requiring active rectification or switching such as automotive, chargers, inverters, welding, UPS, and high frequency ballasts. It has a maximum peak reverse voltage of 1600V, provides excellent high temperature thermal stability, exceptional ESD and surge protection, and is RoHS compliant -all at a competitive cost. Moreover, due to its low internal junction resistance, it offers the ability to operate for almost the entire temperature range, making it one of the most competitive choices on the market. CDSV3-16-G provides a low capacitance of 7 pF at forward voltage, while its reverse recovery time is only 8-14 ns.

The working principle of CDSV3-16-G follows the same as all rectifier diodes. It utilizes the P-N junction between two dissimilar semiconductors to form a diode. Electrons are created in the n-type semiconductor and move to the P-type semiconductor through the diode’s external electric field. This movement creates an electric current and is known as forward bias. Conversely, when the external electric field is reversed, the electrons are no longer able to flow. This is called reverse bias. During reverse bias, the voltage across the P-N junction is blocked and no current is allowed to pass through.

When current passes through the diode in forward bias, it does not dissipate any power during conduction, allowing for full utilization of the power. The CDSV3-16-G diode has a low turn-on time and is capable of carrying high current, making it suitable for fast switching and rectification applications. Additionally, the round face of the diode allows for maximum heat dissipation and is suitable for mounting in any orientation.

The CDSV3-16-G is an ideal solution for applications requiring active rectification and switching that require improved efficiency, increased power, and improved thermal performance. Its fast-recovery and low loss characteristics make it extremely suitable for a variety of high frequency ballast, automotive, and welding applications. Its low capacitance also makes it suitable for applications requiring higher switching frequency and high quality reverse voltage protection. The CDSV3-16-G gives design engineers a competitively-priced, reliable and long-lasting solution for their applications without compromising on performance.

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