Allicdata Part #: | CDSV6-4448AQ-G-ND |
Manufacturer Part#: |
CDSV6-4448AQ-G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Comchip Technology |
Short Description: | DIODE ARRAY GP 80V 500MA SOT363 |
More Detail: | Diode Array 4 Common Cathode Standard 80V 500mA (D... |
DataSheet: | CDSV6-4448AQ-G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05749 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Configuration: | 4 Common Cathode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io) (per Diode): | 500mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 100mA |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 4ns |
Current - Reverse Leakage @ Vr: | 100nA @ 75V |
Operating Temperature - Junction: | 150°C (Max) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Base Part Number: | CDSV6-4448 |
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CDSV6-4448AQ-G
Application Field and Working Principle
CDSV6-4448AQ-G is a type of diode array, which is mainly used in telecommunications, computers, and consumer products to protect against voltage transients. The design of this diode array combines two features, which are protection against both high voltage differential and common-mode transients. It also features a low on-state and clamping voltage, which helps to reduce voltage overload.
The CDSV6-4448AQ-G diode array is composed of three parts, which are the GaAsP substrate, metal-to-insulator layer, and zener barrier. The GaAsP substrate is used to form the diode array structure and is the most important part of the diode array. It provides the conduction pathways for current and helps to produce the desired clamping voltage. The metal-to-insulator layer is placed between the substrate and the zener barriers. This layer helps to prevent electrical discharges between the different components and ensures that enough current can flow through the device. Finally, the zener barrier helps to prevent high voltage transients from passing through the device. It also helps to regulate the current flow across the device.
The working principle of the CDSV6-4448AQ-G diode array is simple. When there is an incoming voltage, the GaAsP substrate initiates the current path. This current path then passes through the metal-to-insulator layer to the zener barrier. The zener barrier limits the amount of current that passes through the device and also helps to regulate the voltage. The diode array then dissipates the excess current and helps to protect the device from voltage overloads.
CDSV6-4448AQ-G diodes are well suited for applications in telecommunications, computers, and consumer products. However, they are also commonly used in high speed switching applications. They are designed to provide a high degree of protection against voltage transients and can help to ensure the safe operation of electronic devices.
In conclusion, the CDSV6-4448AQ-G diode array is a type of diode array which is well suited for a variety of applications. It helps to provide protection against high voltage differential and common-mode transients. It also features a low on-state and clamping voltage, which helps to reduce voltage overload. The working principle of the CDSV6-4448AQ-G diode array is simple, and it is well suited for a variety of applications in telecommunications, computers, and consumer products.
The specific data is subject to PDF, and the above content is for reference
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