Allicdata Part #: | CDZT2R6.2BTR-ND |
Manufacturer Part#: |
CDZT2R6.2B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 6.2V 100MW VMN2 |
More Detail: | Zener Diode 6.2V 100mW ±2% Surface Mount VMN2 |
DataSheet: | CDZT2R6.2B Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Voltage - Zener (Nom) (Vz): | 6.2V |
Tolerance: | ±2% |
Power - Max: | 100mW |
Impedance (Max) (Zzt): | 60 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 3V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-923 |
Supplier Device Package: | VMN2 |
Base Part Number: | CDZ6V2 |
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CDZT2R6.2B are part of the single Zener diodes, which are widely used in electronics and other applications. Zener diodes are semiconductors that are made of materials that can withstand higher voltages than conventional diodes. This enables them to produce highly efficient, predictable, and stable voltage regulation that\'s useful in many applications.
The CDZT2R6.2B is designed for applications that require current voltage regulation up to 650V. It is designed for use in DC power supplies, general purpose AC applications, and other general purpose applications where regulation of the output voltage is necessary. They are also commonly used in communications, industrial equipment, power conversion, domestic equipment, computer and peripheral equipment, and automotive applications.
CDZT2R6.2B applies the Zener principle, which focuses on the injection of majority carriers into the Reverse biased junction to produce an avalanche breakdown. This breakdown results in an operational voltage of 6.2V, allowing the device to maintain a constant output voltage. It is made up of a single rectifier diode with a built-in capacitive bypass. The capacitive bypass allows for a smooth output voltage regulation when the voltage reaches its rated value.
The CDZT2R6.2B is built with a Vceo breakdown voltage of 650V. This enables it to offer peak reverse voltage (Vp) protection. In addition, the device has a maximum DC reverse current of 0.3mA. The junction temperature of the device is also rated for 125°C for soldering purposes.
The CDZT2R6.2B offers superior temperature stability and power dissipating capacity. It has a high operating temperature range of up to 175°C and is rated at 4W power dissipation. In addition, its wide power dissipation allows the device to be used in a wide range of applications, including power management, data acquisition and control systems, AC and DC power regulators, and power rectification arrays.
The CDZT2R6.2B has a wide variety of features, such as its fast response time, low power dissipation, high reliability, and wide operating voltage range. These features enable the device to be used in high-efficiency power management applications. It is also rated to be RoHS compliant and is available in different package types, such as the SMD-SOT23-5, SOT-23-2, SOD-423-2, and DPAK-3 packs.
The CDZT2R6.2B is designed for both commercial and military use. Its rugged construction makes it a suitable candidate for use in harsh environments and power hungry applications. Its fast-response time ensures that the device can quickly react to changes in load or temperature, while its low profile package allows it to fit into narrow spaces. The device is rated at a high operating temperature of 175°C, making it suitable for high-power applications.
The CDZT2R6.2B is the ideal choice for applications requiring precise voltage regulation, high reliability, and high power dissipation. With its high-efficiency operation and superior temperature stability, the device makes an excellent choice for applications requiring highly stable voltage regulation.
The specific data is subject to PDF, and the above content is for reference
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