CDZT2RA4.3B Allicdata Electronics
Allicdata Part #:

CDZT2RA4.3BTR-ND

Manufacturer Part#:

CDZT2RA4.3B

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE ZENER 4.3V 100MW VMN2
More Detail: Zener Diode 4.3V 100mW ±2% Surface Mount VMN2
DataSheet: CDZT2RA4.3B datasheetCDZT2RA4.3B Datasheet/PDF
Quantity: 1000
8000 +: $ 0.05114
16000 +: $ 0.04546
24000 +: $ 0.04262
56000 +: $ 0.03779
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Voltage - Zener (Nom) (Vz): 4.3V
Tolerance: ±2%
Power - Max: 100mW
Impedance (Max) (Zzt): 100 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: VMN2
Description

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CDZT2RA4.3B electro-thermal protection diodes are a single-use protection diode, designed to protect semiconductor devices and other circuit components against thermal runaway and overload conditions. This device type is widely used in various electronic and electrical applications due to its extremely low on-state voltage drop and very low thermal voltage coefficient. Its operating temperature ranges from -40°C to +100°C and offers strong protection over a wide range of temperatures.

The CDZT2RA4.3B diodes are designed with a very specific electro-thermal protection feature. This feature works by providing a high breakdown voltage for applications with variable load current. When a variable loading current exceeds a predetermined limit, the diode will rapidly reduce the voltage to below the breakdown voltage, thus protecting the device from thermal runaway. This feature is especially beneficial in applications with large temperature changes, as the diode will reduce the voltage quickly enough to avoid damage from thermal overload.

The working principle of the CDZT2RA4.3B is relatively simple. When the diode is in its ‘OFF’ stage, slightly more than the designed breakdown voltage is applied across the diode. When the voltage exceeds the breakdown voltage, the diode starts to conduct and provides a low resistance path. This allows the current to flow through the diode with minimum energy consumption. The breakdown voltage varies with temperature, meaning that the diode can provide protection against different levels of voltage fluctuations.

The CDZT2RA4.3B diodes have a wide range of applications in various industries. In the automotive industry, these protection diodes have been used in airbag systems for protection against accidental activation. This is because of the diode\'s capability to reduce the voltage quickly enough to prevent prematurely activated airbags. CDZT2RA4.3B protection diodes have also found applications in the telecommunications industry, where they help suppress interference and allow signals to travel freely. CDZT2RA4.3B can also be used as polarity reversal protection in high speed electronic devices and motors, as they prevent excessive voltage from reaching sensitive components.

CDZT2RA4.3B electro-thermal protection diodes offer superior protection against thermal runaway and overload conditions. The device is designed with a specialized protection feature that rapidly reduces the voltage to below the breakdown voltage when the applied load current exceeds the predetermined limit. This diode type is widely used in various industries due to its very low on-state voltage drop and extremely low thermal voltage coefficient, and its operating temperature ranges from -40°C to +100°C. CDZT2RA4.3B can be used to protect airbags, suppress interference and protect against polarity reversals.

The specific data is subject to PDF, and the above content is for reference

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