CEFB102-G

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CEFB102-G Application Field and Working Principle

The CEFB102-G single rectifier diode has a wide range of application fields, due to its high breakdown voltage, low forward voltage drop and extremely high forward current capabilities.

These features make the diode suitable for high power rectification applications such as the rectification of alternating current (AC) in power supplies, battery chargers and UPS systems. Additionally, the diode is widely used for the protection of electronic circuits and components from overvoltage and associated damage.

Features of CEFB102-G Rectifier Diode

• Small size and good thermal resistance
• High forward surge current capability
• Low forward voltage drop
• High temperature stability and reliability
• Low leakage current

Working Principle

The working principle of the CEFB102-G diode is based on the basic p-n junction diode structure, which allows current to flow in one direction only. When a voltage is applied to the device, the bipolar junction transistor allows current to flow from the positive terminal to the negative terminal.

When a forward voltage is applied across the diode, the junction region of the diode creates a barrier between the anode and the cathode. This barrier prevents electron flow in the opposite direction and allows current to pass only in one direction, i.e. from anode to cathode. This process is known as rectification.

Once the voltage reaches the breakdown voltage of the diode, the barrier breaks down and current can flow in both directions. The breakdown voltage of the CEFB102-G diode is 200V.

Advantages of CEFB102-G Rectifier Diode

The CEFB102-G diode provides several advantages when compared to other diode structures. The device has a high breakdown voltage, which allows it to be used in applications where high voltages are required. Additionally, the diode has a low forward voltage drop and high forward surge current capability, making it suitable for applications where high power is required.

In addition, the CEFB102-G diode has a low leakage current, which is beneficial in applications that require low power dissipation. Finally, the device has a good thermal resistance, which allows it to be used in high temperature environments.

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