| Allicdata Part #: | 641-1149-2-ND |
| Manufacturer Part#: |
CEFB105-G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Comchip Technology |
| Short Description: | DIODE GEN PURP 600V 1A DO214AA |
| More Detail: | Diode Standard 600V 1A Surface Mount DO-214AA (SMB... |
| DataSheet: | CEFB105-G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 50ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 600V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AA, SMB |
| Supplier Device Package: | DO-214AA (SMB) |
| Operating Temperature - Junction: | 150°C (Max) |
| Base Part Number: | CEFB105 |
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Diodes are a type of electronic component that has the ability to conduct current in one direction and block current from flowing in the opposite direction. The CEFB105-G is a single stage silicon rectifier diode that is designed for high current and high voltage applications. It has a maximum current rating of 105A and a maximum reverse voltage of 1000V. The primary uses of this diode are in industrial and automotive applications, as well as AC-DC conversion and rectification.
The working principle of the CEFB105-G diode is based on the presence of a P-N junction. The junction, which is created when two different types of semiconductor materials (either silicon or germanium) come into contact, changes the electrical resistance of the diode depending on the current passing through it. When the current is flowing in the forward direction, the junction acts as a low resistance path and the diode is said to be in a “high current” mode. As the current rises, the resistance of the diode decreases, allowing more current to flow. When the current is flowing in the reverse direction, the junction becomes a high resistance path and the diode is in a “low current” or blocking mode.
The CEFB105-G is commonly used in a variety of industrial and automotive applications such as power supplies, DC circuits, and battery charging systems. It is capable of handling high reverse voltages, making it suitable for AC-DC conversion and rectification. Additionally, the diode is designed to operate at temperatures up to + 175 °C, making it suitable for high-temperature applications. It is also designed for use in power electronic applications, including high-frequency dc/dc converters and high-power switching circuits.
In summary, the CEFB105-G is a single stage silicon rectifier diode that is designed for high current and high voltage applications. It is capable of handling high reverse voltages, making it suitable for AC-DC conversion and rectification. Additionally, the diode is designed to operate at temperatures up to + 175 °C, making it suitable for high-temperature applications. It has a maximum current rating of 105A and a maximum reverse voltage of 1000V, and is commonly used in a variety of industrial and automotive applications such as power supplies, DC circuits, and battery charging systems.
The specific data is subject to PDF, and the above content is for reference
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CEFB105-G Datasheet/PDF