CLF1G0035S-100PU

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The CLF1G0035S-100PU is a depletion-mode Enhancement-mode n-channel Field-effect Transistor (FET). It is used as a Radio Frequency (RF) transistor and is designed primarily for radio-frequency applications. It has a high current-to-voltage ratio and can operate at very high frequencies. This makes it an ideal choice for RF applications, such as amplifiers, mixers, oscillators, and switches.

The key feature of an FET is its semiconductor structure, which is a self-regulating device. In a simple FET circuit, a semiconductor material, such as silicon, is subjected to an electric field which creates an electric field to control the current flow. This electric field creates an energy barrier at the junction between the source and drain of the FET, called the Gate-Source Voltage (VGS). This barrier can be decreased or increased depending on the voltage applied to the gate of the FET, allowing the FET to control the current flow in a circuit.

The CLF1G0035S-100PU is an n-channel, depletion-mode Enhancement-mode FET. Depletion-mode FETs operates with a negative gate-to-source voltage. This voltage, known as the threshold voltage, is the minimum voltage needed to change the FET’s resistance, so that current flow can start. This type of FET is commonly used in RF circuits because it can maintain a very high frequency of operation.

The CLF1G0035S-100PU operates with a maximum drain-source voltage of 80V. It has a maximum drain current of 4A, maximum gate-source voltage of 80V and a maximum drain-source on-resistance of 4.5 ohms. The maximum frequency at which the transistor can operate is 400MHz. It has a power dissipation of 250mW and a junction-to-ambient thermal resistance of 1.3K/W.

The CLF1G0035S-100PU also has an extremely low gate-source capacitance of just 11.6fF. This makes it suitable for high-frequency applications, such as radio frequency (RF) applications. Its low gate-source capacitance also ensures that it consumes lesser power, making it energy-efficient.

The CLF1G0035S-100PU is used in a wide range of RF applications, such as amplifiers, mixers, oscillators, and switches. It is used in amplifiers to increase the output signal power. In mixers, it is used to convert an incoming signal to another frequency, while in oscillators, it is used to generate signals at a fixed frequency. In switches, the FET is used to switch between different signals or circuits.

The CLF1G0035S-100PU is ideal for use in applications that require a high frequency and wide temperature range operation. It is also suitable for applications that require a very high current-to-voltage ratio, such as in digital circuits. Its low gate-source capacitance ensures low power consumption and energy efficiency. The CLF1G0035S-100PU is a powerful and versatile FET that can be used in a variety of RF applications.

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