CM75RL-24NF

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CM75RL-24NF is an insulated gate bipolar transistor (IGBT) module designed to provide high power, low losses and high voltage capability. It is made up of two different components: a power IGBT, which is a high-voltage, high-current semiconductor device, and an integrated gate driver. To make the CM75RL-24NF even more powerful, an IC-level internal protective circuitry can be added. These features make the CM75RL-24NF especially suitable for applications requiring high power requirements.

Application Fields of CM75RL-24NF:

The CM75RL-24NF is a versatile IGBT module for a variety of high-power applications. It is suitable for motor control, UPS systems, power supplies, high-voltage DC-DC converters, welding systems, traction systems, active front ends, and servo drives. The power dissipation of the CM75RL-24NF can be up to 3500 Watts, with a mounting location that is only 32.1mm².

The IGBT provides a low on-state voltage and fast switching times which makes it an obvious choice for many industrial applications. The low power consumption of the IGBT makes it suitable for energy-efficient applications and its soft switching behavior allows for lower EMI levels.

Working Principle of CM75RL-24NF:

The basic working principle of the CM75RL-24NF is to utilize a high-voltage silicon switch, which acts as a semiconductor. This switch, when turned on and off, causes a current to flow between the two source and drain terminals. This current can be switched rapidly, allowing for high switching frequency. In addition, two gate terminals are also used to control the gate voltage, and thus the current.

The gate driver of the CM75RL-24NF is an integrated IC that provides the necessary insulation for high-voltage and high-power switching. It also includes internal protection circuitry to ensure the reliability of the module. The IC-level protection includes over-current, over-voltage and over-temperature protection.

The CM75RL-24NF is a powerful IGBT module with a variety of characteristics to suit any application. Its low on-state voltage and fast switching times make it especially suitable for motor control applications. It is also capable of soft switching for improved EMI levels. Finally, the integrated gate driver and internal protection ensure reliability.

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