CMDZ5230B TR Allicdata Electronics

CMDZ5230B TR Discrete Semiconductor Products

Allicdata Part #:

CMDZ5230BTR-ND

Manufacturer Part#:

CMDZ5230B TR

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: DIODE ZENER 4.7V 250MW SOD323
More Detail: Zener Diode 4.7V 250mW ±5% Surface Mount SOD-323
DataSheet: CMDZ5230B TR datasheetCMDZ5230B TR Datasheet/PDF
Quantity: 6000
3000 +: $ 0.06549
6000 +: $ 0.06152
15000 +: $ 0.05755
30000 +: $ 0.05292
Stock 6000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±5%
Power - Max: 250mW
Impedance (Max) (Zzt): 19 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Description

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CMDZ5230B TR Application Field and Working Principle

The CMDZ5230B TR is a single Zener diode designed for use in a variety of applications, such as voltage regulation, pulse width modulation, overvoltage protection, and ESD (electrostatic discharge) protection. Its low-voltage, wide reverse differential resistance (RDR), and low-temperature coefficient make it ideal for use in a wide range of electronic devices.

The CMDZ5230B TR is a low-voltage Zener diode that can operate between –4V and 4V. It features a reverse voltage rating of 20V with a forward voltage rating of 0.7V and an operating temperature range of –55°C to +125°C. The CMDZ5230B TR\'s wide reverse differential resistance (RDR) allows it to draw very low levels of current which make it suitable for use in applications that require low noise, high efficiency, and low power consumption. It also has low power dissipation which allows it to be used in high-temperature environments.

The working principle of the CMDZ5230B TR is based on the Zener breakdown. A Zener diode has two terminals, an anode and a cathode, and when a positive voltage is applied to the anode, it creates an electric field in the region between the two terminals. If the voltage applied is greater than the Zener voltage of the diode, the electric field intensity increases and a breakdown occurs, allowing current to flow.

The CMDZ5230B TR can be used for a variety of applications such as voltage regulation, pulse width modulation, ESD protection, and overvoltage protection. It can be used as a voltage regulator to maintain a constant output voltage while allowing large variations in the input voltage. It can also be used as a pulse width modulator to reduce power consumption and eliminate EMI (electromagnetic interference). It can be used for ESD protection to reduce the possibility of equipment and device damage due to static electricity. Finally, it can be used as an overvoltage protection device to prevent damage due to unexpected spikes in voltage.

In conclusion, the CMDZ5230B TR is a versatile, low-voltage, wide RDR Zener diode that is ideal for use in a variety of applications. Its low power dissipation and wide temperature range make it suitable for use in high-temperature environments. Its low-voltage and wide RDR characteristics make it ideal for use in low-noise, high-efficiency, low-power applications. The Zener breakdown principle is the basis for the device\'s working and it is used for voltage regulation, pulse width modulation, ESD protection, and overvoltage protection.

The specific data is subject to PDF, and the above content is for reference

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