Allicdata Part #: | CMHZ5222BTR-ND |
Manufacturer Part#: |
CMHZ5222B TR |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | DIODE ZENER 2.5V 500MW SOD123 |
More Detail: | Zener Diode 2.5V 500mW ±5% Surface Mount SOD-123 |
DataSheet: | CMHZ5222B TR Datasheet/PDF |
Quantity: | 1000 |
9000 +: | $ 0.06152 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 2.5V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 30 Ohms |
Current - Reverse Leakage @ Vr: | 100µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
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CMHZ5222B TR is a single, overvoltage-protected zener diode with low dynamic impedance and high stable voltage. It is produced in a DO-204AC (DO-35) package and is suitable for applications such as digital logic circuits, protection of integrated circuits, overvoltage protection and reference voltage source. It is available in a variety of voltages and breakdown voltages ranging from 3.0V to 75.0V.
The construction of the CMHZ5222B TR is based on a planar epitaxial structure, which consists of a P-type semiconductor layer, approximately 3 µm thick, deposited on an N-type layer. The junction between these two layers is heavily doped with impurities to produce a heavily doped N-type layer near the upper surface. The junction is basically a P-N junction. It is protected against breakdown experienced due to increasing voltage by the elongated P+ layer. This P+ layer acts as a very thin guard ring or gettering ring, to side-track any leakage current.
The working principle of the CMHZ5222B TR is as follows. When an external voltage source is applied to the device, the current begins to flow into the device through both the P+ and the N+ layers. At very low forward voltages, the current is limited by the device resistance and the voltage across the P-N junction drops. If the applied voltage increases further, the current through the device begins to increase exponentially until it reaches a level where the P-N junction has become sufficiently forward biased and zener breakdown occurs.
Once zener breakdown occurs, the voltage across the junction stops increasing and the current through it remains constant at the zener breakdown voltage. This constant current through the junction is termed as its zener current, as it is independent of the applied voltage. This current is limited by the characteristics of the material used for construction and thus maximum current ratings for the particular diodes should not be exceeded.
When the external voltage is higher than the zener breakdown voltage, current flows from the anode (positive) to the Cathode (negative) of the CMHZ5222B TR. This device is able to dissipate considerable amount of power, which can be useful for some applications. The typical applications of CMHZ5222B TR include Audio Voltage Regulator, Overvoltage Protection, Polarity Reversal Protection, Voltage Reference and Voltage Clamping.
The overvoltage protection application is one of the most popular types of applications for the CMHZ5222B TR. In this application, the zener diode works as a clamping device. Whenever the applied voltage rises above the zener breakdown voltage of the device, the device begins to conduct, thus limiting the voltage to the zener breakdown voltage of the device. This prevents the connected circuits from being damaged due to the high voltage. Similarly, the reverse polarity protection application uses the same principle, although in the reverse direction.
The voltage reference application, on the other hand, utilizes the constant voltage that is present across the diode even at higher voltages. This constant voltage across the diode can be used to create a steady voltage source that can be used for a variety of applications, such as keeping the output of an amplifier constant, providing a clean, stable power supply for high-frequency signal processing or providing a stable reference voltage for power management applications. The voltage clamping application, similarly, utilizes the zener breakdown voltage of the diode to protect the connected circuits from transient overvoltages.
Overall, the CMHZ5222B TR is a compact, efficient and reliable device. It offers a wide range of applications due to its low dynamic impedance and high stable voltage. Its planar epitaxial construction also makes it suitable for a variety of applications in digital logic circuits and protection of integrated circuits. Moreover, its low cost and high availability make it one of the most popular zener diodes used in various applications.
The specific data is subject to PDF, and the above content is for reference
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