CMSZ5250B TR Allicdata Electronics
Allicdata Part #:

CMSZ5250BTR-ND

Manufacturer Part#:

CMSZ5250B TR

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: DIODE ZENER 20V 500MW SOT323
More Detail: Zener Diode 20V 275mW ±5% Surface Mount SOT-323
DataSheet: CMSZ5250B TR datasheetCMSZ5250B TR Datasheet/PDF
Quantity: 3000
3000 +: $ 0.06799
6000 +: $ 0.06421
15000 +: $ 0.05855
30000 +: $ 0.05477
Stock 3000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 20V
Tolerance: ±5%
Power - Max: 275mW
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 15V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

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CMSZ5250B TR Application Field and Working Principle

The CMSZ5250B TR is a type of diode that is available in single and dual bands. It is used for a variety of applications, such as in high-speed photodetectors and for low voltage Surge Protective Devices (SPD). In addition to its versatile applications, the CMSZ5250B TR also offers excellent protection against transients up to 30V.

Features and Benefits

  • Designed for sensitive and high-speed diode applications such as photodetectors
  • Offers an excellent protection against transients up to 30V
  • High capacitance retention and low leakage current
  • Available in single and dual bands
  • Low capacitance and fast reverse recovery time

Applications

The CMSZ5250B TR is popularly used for high-speed photodetectors, such as photomultiplier tubes, photocouplers, PIN photodiodes, avalanche photodiodes, and other visible or ultraviolet light detectors. It is also used for low voltage Surge Protective Devices (SPD) and for other medium-voltage applications.

Working Principle

The CMSZ5250B TR is a PN junction diode that operates in the reverse breakdown regime. An electric field is induced when a positive voltage is applied to the anode and negative voltage to the cathode, thus creating a depletion region across the PN junction. The width of the depletion region will depend on the voltage applied. Once the reverse voltage across the diode reaches the PN junction\'s breakdown voltage, the diode will start conducting.

The breakdown voltage value of the CMSZ5250B TR is determined by the composition of its semiconductor material. For instance, a Zener diode typically has a breakdown voltage of about 5V. The maximum voltage and current rating of the CMSZ5250B TR should not be exceeded to prevent damage to the device.

Conclusion

The CMSZ5250B TR is a versatile diode that offers excellent protection against transients up to 30V and is suitable for a wide range of applications. It is particularly popular for its use in high-speed photodetectors, SPDs, and other medium-voltage applications. Furthermore, its low capacitance and fast reverse recovery time make it an ideal choice for these kind of applications.

The specific data is subject to PDF, and the above content is for reference

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