CMXDM7002A TR

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The CMXDM7002A TR is an advanced monolithic, integrated circuit designed for small-signal general-purpose, high-gain applications in the industrial, commercial and consumer fields. It has a wide range of applications including audio, video, sensing and networking. The device consists of a single channel power MOSFET array and includes two series transistors, one N-channel transistor and one P-channel transistor, each with an independent source, gate and drain, as well as on-chip diodes for the reverse-biased, combined junctions of the FETs. It is available in dual or single N-channel configuration.

The CMXDM7002A TR is a dual N-channel and single P-channel high-performance field-effect transistor (FET). The device features a drain oxidation layer which reduces parasitic capacitance, providing increased gate drive and improved switching performance. It also features an improved gate oxide layer which improves overall performance and increases circuit stability. Furthermore, it has an adjustable voltage sense input, an active drain current limiter, and a thermal short circuit detection circuit.

The CMXDM7002A TR is designed to be used in high power applications such as motor control, switch mode power supplies, current source and load switching, pulse and waveform control, high-side load switching, etc. The CMXDM7002A TR is an ideal choice for applications requiring low-impedance and low-unbalance. The device offers superior performance, high efficiency, superior thermal capability and superior EMI reduction. It is available in both single and dual configurations.

The working principle of the CMXDM7002A TR is based on a high-gain logic circuit composed of two series transistors and a common gate circuit. The two series transistors control the voltage and current flow across the channel when the gate switch is triggered. When the gate switch is triggered, a voltage divider effect is established between the two series transistors. This acts to reduce the available voltage and current across the channel, resulting in the current and voltage flow being proportional to the gate voltage. The transistors, in turn, contain diodes for the reverse-biased combined junctions of the transistors, which enable the flow of current and voltage. By adjusting the gate voltage, the current can be controlled to either increase or decrease.

The CMXDM7002A TR is a highly efficient, low-impedance, high-gain device, with excellent thermal and EMI reduction capabilities, making it an ideal choice for a wide range of high-power applications in industrial, commercial and consumer applications. Its adjustable voltage sense input and active drain current limiter also make it an ideal choice for applications requiring high-precision. The device is also easy to use and is compatible with a wide range of voltage and power requirements.

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