Allicdata Part #: | CP30TD1-12A-ND |
Manufacturer Part#: |
CP30TD1-12A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Powerex Inc. |
Short Description: | DIP-CIB MOD 600V 30A |
More Detail: | IGBT Module Three Phase Inverter with Brake 600V ... |
DataSheet: | CP30TD1-12A Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | -- |
Configuration: | Three Phase Inverter with Brake |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 30A |
Power - Max: | 114W |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 30A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 2.36nF @ 10V |
Input: | Three Phase Bridge Rectifier |
NTC Thermistor: | Yes |
Operating Temperature: | -20°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 26-DIP Module |
Supplier Device Package: | -- |
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The CP30TD1-12A module is an insulated gate bipolar transistor (IGBT) module. It includes one IGBT and one diode in a single package. This type of semiconductor module is popular in various industrial applications, such as robotics, renewable energy, and consumer products. The CP30TD1-12A module combines the efficiency of an IGBT with the fast switching speed of a diode, making it an ideal solution for a variety of applications.
The CP30TD1-12A module has many features and benefits that make it a great choice for industrial applications. It has a high current capacity, low loss and temperature resistance, plus low switching noise and high switching speed. Additionally, the module is designed with a neodymium-iron-boron-insulated case that helps reduce power losses and improve system efficiency.
The most notable feature of the CP30TD1-12A module is its IGBT-based design. An IGBT is a type of transistor that combines the characteristics of a MOSFET (metal-oxide-semiconductor field-effect transistor) and a bipolar transistor. It includes an internal gate structure which allows for superior voltage control and very low on-state resistance. This makes it an ideal choice for applications that require high switching speeds, high current capacity and low loss.
The working principle of the CP30TD1-12A module involves the operation of its IGBT component. When the gate control voltage is applied to the module, it creates an electrical field inside the device. This electrical field is used to allow the flow of electrons through the IGBT\'s junction, thus allowing the module to switch between low and high current states.
The CP30TD1-12A module can be found in many types of industrial applications, ranging from small consumer products to large renewable energy plants. Its features make it an excellent choice for high-efficiency power supply applications, including motor drive control and power conversion. Additionally, its high current capacity and low loss make it ideal for high-power industrial applications such as welding and plasma cutting.
In summary, the CP30TD1-12A module is an insulated gate bipolar transistor (IGBT) module that is ideal for a variety of industrial applications. It has low on-state resistance and a low switching noise and has a high current capacity and low temperature resistance. Additionally, its IGBT-based design allows for superior voltage control and very low on-state resistance, making it an excellent choice for power applications.
The specific data is subject to PDF, and the above content is for reference
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