CY62157DV30LL-55BVXI Allicdata Electronics
Allicdata Part #:

428-1859-ND

Manufacturer Part#:

CY62157DV30LL-55BVXI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 8M PARALLEL 48VFBGA
More Detail: SRAM - Asynchronous Memory IC 8Mb (512K x 16) Para...
DataSheet: CY62157DV30LL-55BVXI datasheetCY62157DV30LL-55BVXI Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: MoBL®
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)
Base Part Number: CY62157
Description

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CY62157DV30LL-55BVXI is a type of low-power Static Random Access Memory (SRAM) which is used for non-volatile memory applications and system management. This type of Memory is typically used in embedded systems including medical, automotive, and industrial applications.

CY62157DV30LL-55BVXI has a high-density pin-out offering 10-bit and 16-bit address and data bus capability. It is suitable for integration with DSP systems and various micro-controllers. The integrated memory device has an asynchronous programming interface, enabling it to be used for both FPGA and ASIC configuration.

CY62157DV30LL-55BVXI comes in two different memory packaging options – TQFPs and QFNs, offering different board footprints and reliability options. The integrated memory device also features fast read and write speeds, low operating power and advanced features such as automatic data retention and self-refresh capability. The device also supports built-in error detection and correction, as well as advanced data security features.

CY62157DV30LL-55BVXI is designed to operate in wide temperature ranges,and provides superior data retention and performance in any environment. Furthermore, the integrated device is available in various densities, offering up to 8-megabit ROM, 2-megabytes of RAM and 512-bit Flash memory.

The working principle behind CY62157DV30LL-55BVXI is the SRAM cell architecture. It consists of four transistors and two inverters, enabling data to be stored in a static form. This architectural design allows for very fast access times, which is a major advantage over other memory technologies, such as Flash memory. It also offers low power requirements and can support high-speed data transfer.

In addition to its applications in embedded systems, CY62157DV30LL-55BVXI is also popular for use in consumer electronics and gaming consoles. It is often used for memory configurations, allowing for the storing of important settings and parameters. Additionally, this type of memory can be used for data back-up and restore purposes. The memory device\'s fast access times and low power usage make it an ideal choice for a variety of consumer, medical, and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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