CY62126EV30LL-45BVXI Allicdata Electronics
Allicdata Part #:

428-2062-ND

Manufacturer Part#:

CY62126EV30LL-45BVXI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 1M PARALLEL 48VFBGA
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: CY62126EV30LL-45BVXI datasheetCY62126EV30LL-45BVXI Datasheet/PDF
Quantity: 68
Stock 68Can Ship Immediately
Specifications
Series: MoBL®
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)
Base Part Number: CY62126
Description

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Memory is one of the most essential components of any computing system. There are various types of memory, such as random access memory (RAM), read-only memory (ROM), and flash memory. The CY62126EV30LL-45BVXI is an example of flash memory. In this article, we will discuss the application field and working principle of the CY62126EV30LL-45BVXI.

The CY62126EV30LL-45BVXI is a 32Mb non-volatile memory device intended for low-power, in-system programmable applications. It is ideal for designs that require small form factor, low power dissipation, high performance and low cost. It is designed to be directly interfaced to a microcontroller, processor or digital signal processor through its industry-standard SPI/QSPI bus interface. The device is available as a 48-ball WSON (7x7mm) and may be ordered with either top or bottom marking.

The device offers 32Mb of Flash non-volatile memory that is divided into 512-kbyte (6-Kbyte) erase sectors. A serial interface capable of transfer rates up to 133-MHz is provided. It is an ideal solution for designs requiring a small Flash memory with an industry-standard SPI/QSPI bus interface.

CY62126EV30LL-45BVXI is typically used in embedded systems,such as industrial control systems,smart home,handheld devices and automotive,etc. It greatly reduce the system board size and cost while providing fast access times and low power consumption. In addition,it can be used in systems where data must be retained in non-volatile memory when the system is powered off.

The working principle of the CY62126EV30LL-45BVXI is based on the same principle that is used in all flash memory. It is composed of an array of transistors that store and manipulate bits of data in an electrical field. This electrical field is formed by a fuse and an oxide layer. When the current flows through the fuse and the oxide layer, it splits the oxide layer to form an electrical field. This electrical field stores the data from the transistors until the power is removed and the oxide layer reforms.

The CY62126EV30LL-45BVXI also has a built-in controller that handles the communications between it and the system microcontroller. The controller has a set of commands that can be used to read, write and erase data in the memory. The controller also supports an Enhanced Array Read Mode that allows up to 10 clocks to be sent to the device and up to 8 bytes of data to be read in a single clock cycle.

In conclusion, the CY62126EV30LL-45BVXI is an example of a Flash memory device. It is capable of providing 32Mb of non-volatile memory and has an industry-standard SPI/QSPI bus interface. It is used in various embedded systems and has a built-in controller that handles the communications between it and the system microcontroller. The device is based on the same principle as other Flash memories and utilizes an electrical field to store and manipulate bits of data.

The specific data is subject to PDF, and the above content is for reference

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