| Allicdata Part #: | CY62168DV30LL-55BVXIT-ND |
| Manufacturer Part#: |
CY62168DV30LL-55BVXIT |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC SRAM 16M PARALLEL 48VFBGA |
| More Detail: | SRAM - Asynchronous Memory IC 16Mb (2M x 8) Parall... |
| DataSheet: | CY62168DV30LL-55BVXIT Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | MoBL® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Asynchronous |
| Memory Size: | 16Mb (2M x 8) |
| Write Cycle Time - Word, Page: | 55ns |
| Access Time: | 55ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.2 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 48-VFBGA |
| Supplier Device Package: | 48-VFBGA (8x9.5) |
| Base Part Number: | CY62168 |
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Memory:CY62168DV30LL-55BVXIT
The CY62168DV30LL-55BVXIT stand-alone Static RAM is an advanced memory integrated circuit (IC) developed by Cypress Semiconductor. It is a 55 nm process, low-power 2 M x 8 Static Random Access Memory (SRAM) with a 5.5V operating voltage range. The CY62168DV30LL-55BVXIT has been designed to provide a low-power, reliable solution for a variety of applications, such as high-end graphics, embedded memory applications, storage devices, and communications infrastructures.
Specifically, this part is a 256K x 8 bit device constructed using traditional CMOS logic gates and Memories. It is organized as 8K x 32 words, allowing it to store up to 8 K words (32 bits) in an 8-bit memory. This memory is also designed to offer excellent operating temperature range, with a stress temperature range of -55 to +125 degrees Celsius.
The CY62168DV30LL-55BVXIT comes with an asynchronous control interface that consists of 8 memory control lines - ALE, / RD, / WR, CS, OE, WE, R/W and VDD Power. It also comes with a single 5.5V data supply terminal, a VSS ground terminal, and a VCC supply terminal. Moreover, this part has a 32-word data input/output port, with a maximum access time of 20 ns at 4.2V and an asynchronous access time of 55ns at 5.5V.
The CY62168DV30LL-55BVXIT is designed to operate at a supply voltage of 5.5V, with a capacitive loading of 15pF. Additionally, this part is designed with a 70 mA standby current and a 500 mA operating current, which allows it to deliver 10 mA/MHz efficiency while operating. It also has an IDD power dissipation of 5mA typical (@5.5V). This part has the ability to operate at a temperature range of -40°C to 85°C.
In terms of its features, the CY62168DV30LL-55BVXIT supports many common memory modifications, such as wear-leveling, WRAP, page programming, and block programming. It also comes with an automatic power-down feature and a write-protection mode that can be enabled/disabled via a /WP signal.
CY62168DV30LL-55BVXIT Application Field
The low-power CY62168DV30LL-55BVXIT is a perfect fit for high-end graphics, embedded memory applications, industrial applications, storage devices and communications infrastructures. It is also ideal for many consumer applications, such as automotive infotainment systems, PDA memory cards, security cards, cell phone memory, digital cameras, and GPS systems, due to its low-power requirement and large capacity.
CY62168DV30LL-55BVXIT Working Principle
The working principle of the CY62168DV30LL-55BVXIT is simple. It uses a single 5.5V data supply terminal, a VSS ground terminal, and a VCC supply terminal. A 32-word data input/output port is connected to the device, with a maximum access time of 20 ns at 4.2V and an asynchronous access time of 55 ns at 5.5V. This memory is also designed to offer excellent operating temperature range, with a stress temperature range of -55 to +125 degrees Celsius.
When an incoming signal is detected by the device, it will instantly decode the signal, perform the required tasks and then output an acknowledgement signal that indicates the completion of the requested operation. The data will be either stored or retrieved from the SRAM. The data needs to be stored inside the memory in order to retrieve it later. Once the data is retrieved from the memory, the device will also check for any errors that may have occurred during the operations.
The CY62168DV30LL-55BVXIT also supports a number of features, such as wear-leveling, WRAP, page programming and block programming. These features enable the device to be more reliable and efficient when dealing with large amounts of data. In addition, this part can also be used in automotive infotainment systems, PDA memory cards, security cards, cell phone memory, digital cameras, and GPS systems, thanks to its low-power requirement and large capacity.
The specific data is subject to PDF, and the above content is for reference
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CY62168DV30LL-55BVXIT Datasheet/PDF