CY7C0831AV-133BBXI

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The CY7C0831AV-133BBXI is a high-performance, low-voltage, low-power 8K x 9 bit (72Kb) static RAM (SRAM) component. It operates on a single +2.7V to +3.6V power supply, and comes packed in a TSSOP-20 package. This component is suitable for a wide range of applications, including industrial, medical, and automation control systems.

The CY7C0831AV-133BBXI is a high-speed, low-power SRAM device that uses a three-transistor cell to reduce power consumption to just 14mA (max.) at a power supply voltage of 3.3V. This component also offers fast read access times at minimal power consumption, making it an ideal choice for industrial applications where power efficiency is of critical importance. Additionally, this component is capable of operating at temperatures ranging from –40°C to +85°C, making it suitable for a range of industrial and automotive applications.

The CY7C0831AV-133BBXI is a versatile memory component that can be used for a wide range of applications, such as long-term data storage, large font storage, and high-speed data transmission. Its 8K x 9 bit architecture allows it to store up to 8Kb of data, and its high-performance operation allows it to tackle complex data processing tasks with ease. Also, this component features a single read/write port that eliminates the need for multiple access ports and additional logic for write operations.

In terms of aspect of working principle, the CY7C0831AV-133BBXI uses the three-transistor SRAM cell architecture to store data. The three transistors are arranged in the form of a latch, which allows data to be read from or written to memory when a low-voltage write enable signal is applied. The transistors used in the three-transistor SRAM cell also provide for high-speed data transfer and low power consumption.

When accessing data from or writing data to the CY7C0831AV-133BBXI, the device will first receive a read or write address. The address is then decoded before accessing the associated memory location, with the data being either read or written. This device also features an asynchronous read/write port that enables fast data accesses while reducing power consumption. Additionally, this device features a high-speed output buffer, allowing for fast data transfers.

As mentioned above, the CY7C0831AV-133BBXI is a low-voltage, low-power 8K x 9 bit SRAM component that is suitable for industrial, medical, and automotive applications. Its three-transistor cell architecture facilitates fast read and write operations with a minimum of power consumption, while its high-speed output buffer enables fast data transfers. This component is an ideal choice for embedded memory applications that require data storage and fast data access times.

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