CY7C1512V18-167BZC Allicdata Electronics
Allicdata Part #:

CY7C1512V18-167BZC-ND

Manufacturer Part#:

CY7C1512V18-167BZC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 72M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, QDR II Memory IC 72Mb (4M x 18...
DataSheet: CY7C1512V18-167BZC datasheetCY7C1512V18-167BZC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 72Mb (4M x 18)
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)
Base Part Number: CY7C1512
Description

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The CY7C1512V18-167BZC is an 8-kilobit CMOS low-power SRAM that is used predominantly in memory applications. This device offers a variety of features, such as low power consumption, high speed access time, and high endurance. It is a non-volatile memory and offers reliable storage for data. This device is available in a variety of packages such as PQFP and LQFP.

It is ideal for applications that require low-power consumption and quick response times, as well as large memory capacity.

The CY7C1512V18-167BZC is a low-power, 0.45-nanosecond access time, 8-kilobit CMOS SRAM with non-volatile protection and is available in both PQFP and LQFP package types. It offers a variety of features such as high-endurance (100K rewrites per device), low-power consumption (200 mW at 1 MHz), high Speed access time (0.45 ns max), wide voltage range (2.7V to 3.6V) and compatibility with various microprocessors and microcontrollers. It also offers data protection and is designed for long life use.

The CY7C1512V18-167BZC can be used in a wide range of applications. It can be used in automotive, industrial and consumer applications that require low-power, high-speed and reliable storage of data. Some of these applications include automotive keyless entry systems, automotive instrumentation, navigational systems, motion control and medical imaging.

The CY7C1512V18-167BZC operates on the principle of reading and writing data to and from memory cells. The memory cells are non-volatile, meaning that data will not be lost, even when the power is switched off. Each memory cell consists of a transistor and two capacitors. The data is stored by either charging or discharging the capacitors. When a read or write request is received, the data stored in the cell is retrieved, and the contents of the cell is written to or from other cells.

The CY7C1512V18-167BZC can also be used for fast application switching. Since the data is stored in volatile SRAM, it can be quickly accessed without having to wait for the data to be retrieved from a non-volatile memory. This increases the speed of application switching, allowing the processor to do more in less time.

The CY7C1512V18-167BZC offers several advantages. It has low power consumption, high speed access time, high endurance, a wide voltage range and durable protection from data loss. This device is ideal for memory applications that require reliable storage and fast access time. It is designed for long-term use and provides excellent performance for many applications.

The specific data is subject to PDF, and the above content is for reference

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