CY7C09199V-6AXC Allicdata Electronics
Allicdata Part #:

CY7C09199V-6AXC-ND

Manufacturer Part#:

CY7C09199V-6AXC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 1.152M PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Synchronous Memory IC 1.152Mb (1...
DataSheet: CY7C09199V-6AXC datasheetCY7C09199V-6AXC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: CY7C09199
Supplier Device Package: 100-TQFP (14x14)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3 V ~ 3.6 V
Memory Interface: Parallel
Access Time: 6.5ns
Series: --
Clock Frequency: 100MHz
Memory Size: 1.152Mb (128K x 9)
Technology: SRAM - Dual Port, Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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CY7C09199V-6AXC is a high-speed SRAM memory integrated circuit from Cypress Semiconductor that provides an advanced level of performance, low power consumption, and broad development support. It is designed to meet the needs of a wide range of applications, ranging from automotive, telecom, and medical equipment to embedded systems and industrial control. This memory device combines SRAM, Flash memory, and E2PROM memory on a single chip, offering a low-power solution with high speed and large capacity for device application.

CY7C09199V-6AXC has two main application fields: Data Storage Applications and Communication Applications. In data storage applications, CY7C09199V-6AXC can be used to store data that needs to be quickly accessed. Examples include temporarily storing data from sensors, storing information from databases, and storing important data for application programs. In communication applications, CY7C09199V-6AXC can be used to store the code necessary for various communication protocols, such as Ethernet and Wi-Fi. This can reduce the time and resources needed to construct the network, and enable applications to better interact with each other.

CY7C09199V-6AXC employs an Advanced Static Edge Sense (ASES-L) high-speed access system. This system consists of a static memory array, which consists of four groups of RAM cells, and a static edge detector which senses the moment when the RAM cells switch between read and write operations. The static edge detector then sends a signal to the control unit, which processes the information and then sends it to the peripheral devices. The RAM cells operate on a single-cycle read/write cycle, providing a fast and efficient way to access memory.

CY7C09199V-6AXC also employs a unique power saving feature. The power of the device is reduced when it is entering an idle state, allowing the device to consume less power when the system is not actively being used. The device is also capable of larger capacity storage compared to other SRAMs, with a storage capacity up to 4 Megabytes (Mb).

Overall, CY7C09199V-6AXC offers a reliable and high-speed SRAM solution that is suitable for a variety of applications. With its low power consumption and high speed access, CY7C09199V-6AXC is an excellent choice for data storage and communication applications.

The specific data is subject to PDF, and the above content is for reference

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