| Allicdata Part #: | CY7C1021BNV33L-15ZXC-ND |
| Manufacturer Part#: |
CY7C1021BNV33L-15ZXC |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC SRAM 1M PARALLEL 44TSOP II |
| More Detail: | SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral... |
| DataSheet: | CY7C1021BNV33L-15ZXC Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Asynchronous |
| Memory Size: | 1Mb (64K x 16) |
| Write Cycle Time - Word, Page: | 15ns |
| Access Time: | 15ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 3 V ~ 3.6 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package: | 44-TSOP II |
| Base Part Number: | CY7C1021 |
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The CY7C1021BNV33L-15ZXC is a member of the CY7C1021 family of F-RAM, or ferroelectric random access memory, products available from Cypress Semiconductor. It is an NV SRAM that can hold up to 2K bits of data in an 8-pin package, and is an ideal choice for applications that require high write endurance, fast read/write access, ultralow power and data retention over power loss.
F-RAM is a type of non-volatile computer memory that combines the properties of RAM and ROM. Unlike RAM, which is volatile and needs electricity to maintain the stored data, F-RAM, retains its data even when no power is applied. Since F-RAM offers fast read/write access, high write endurance and low power, it has a much broader application scope than traditional EEPROMs. In fact, F-RAMs are being used in a variety of applications including industrial, automotive, consumer and communication products.
The working principle of the CY7C1021BNV33L-15ZXC is simple and requires minimal effort to understand. F-RAM works by using a technique known as ferroelectricity. In this technique, a small film of ferroelectric material is placed between two conductive electrodes. A voltage is applied to one electrode and the other electrode is monitored. When a voltage is applied to the ferroelectric material, it polarizes, resulting in a change of resistance. This change of resistance is used to store information.
The CY7C1021BNV33L-15ZXC is a perfect choice for a variety of applications where the need for fast read/write access, low power consumption, and high write endurance is crucial. With a wide operating temperature range, this product is an ideal choice for automotive, consumer, industrial, and communications applications. It is also suitable for embedded systems, extreme environment applications, and real-time control applications. Additionally, its 2K bit memory capacity allows the user to store larger bits of data in less space.
The CY7C1021BNV33L-15ZXC has a number of advantages over traditional EEPROMs. With a 10-times faster write speed and a usual write-to-read cycle speed of 100 ns, this product can be used in critical applications that need fast performance. Additionally, its data retention time is up to 25 years, offering reliable performance over an extended period of time. All these features together make the CY7C1021BNV33L-15ZXC an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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