| Allicdata Part #: | CY7C1041CV33-10BAJXE-ND |
| Manufacturer Part#: |
CY7C1041CV33-10BAJXE |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC SRAM 4M PARALLEL 48FBGA |
| More Detail: | SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para... |
| DataSheet: | CY7C1041CV33-10BAJXE Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Discontinued at Digi-Key |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Asynchronous |
| Memory Size: | 4Mb (256K x 16) |
| Write Cycle Time - Word, Page: | 10ns |
| Access Time: | 10ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 3 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 125°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 48-TFBGA |
| Supplier Device Package: | 48-FBGA (6x8) |
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CY7C1041CV33-10BAJXE is a series of serial access Static Random-Access Memory (SRAM) IC from Cypress Semiconductor Corporation. It is a device which stores data bits as one bit per cell and provides access to the data bits by using sequential addressing. It is used in a variety of applications, from embedded systems to consumer products.
The main application of the CY7C1041CV33-10BAJXE series is data storage in embedded systems and consumer products. Due to its high speed, low voltage operation and low power consumption, it is an ideal choice for applications such as mobile phones, PDAs, digital cameras, digital audio and video, gaming consoles, and other consumer electronics. Its low voltage and low power consumption make it especially useful in mobile applications where power consumption is of primary concern.
The working principle of the CY7C1041CV33-10BAJXE series is quite simple. It uses a serial access method to read and write the data stored on the device. To read data, the address of the data bit is placed on the AD lines and the device enters into the sequential read mode. The data bit is read from the device by clocking the CLK line. To write data, the data bit is written to the device by placing it on the DI line and then clocking the CLK line. The data bit is then stored in the memory cell corresponding to the address on the AD lines.
The CY7C1041CV33-10BAJXE also offers several additional features such as programmable features, voltage protection and enhanced endurance. The programmable features allow the device to be configurable according to the user\'s requirements. The voltage protection ensures that the device is not damaged due to over-voltage or under-voltage. The enhanced endurance ensures that the data is stored reliably over a long period of time, making the device suitable for long-term storage applications.
In conclusion, the CY7C1041CV33-10BAJXE is a reliable and highly efficient serial access Static Random-Access Memory (SRAM) IC from Cypress Semiconductor Corporation. It is suitable for a variety of applications from embedded systems to consumer products due to its high-speed, low voltage operation and low power consumption. Furthermore, the programmable features, voltage protection and enhanced endurance make it a suitable choice for long-term storage applications.
The specific data is subject to PDF, and the above content is for reference
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CY7C1041CV33-10BAJXE Datasheet/PDF