CY7C1263KV18-500BZXC Allicdata Electronics
Allicdata Part #:

CY7C1263KV18-500BZXC-ND

Manufacturer Part#:

CY7C1263KV18-500BZXC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 36M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, QDR II+ Memory IC 36Mb (2M x 1...
DataSheet: CY7C1263KV18-500BZXC datasheetCY7C1263KV18-500BZXC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II+
Memory Size: 36Mb (2M x 18)
Clock Frequency: 500MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)
Base Part Number: CY7C1263
Description

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Memory is an essential part of a computer or laptop, which allows users to store information and retrieve it when required. CY7C1263KV18-500BZXC is a non-volatile memory device designed for low power and high performance applications for both consumer and industrial markets. This device is available in multiple packages such as DIP, SOIC, TSSOP, QFN, and BGA. This device is fully compliant with JEDEC MO-220 and the industry standard 12C or 12S protocol.

CY7C1263KV18-500BZXC Memory has a wide range of applications due to its features such as low power operation, high performance, flexible memory architecture, fast erase and program time, and superior operating temperature range. It is ideal for applications such as data logging, code storage, parameter storage, and other applications which require non-volatile memory. Additionally, CY7C1263KV18-500BZXC is widely used in automotive, mobile, home appliances, maintenance, network and communication, aerospace, industrial automation, and consumer electronics.

Working principle

CY7C1263KV18-500BZXC Memory is designed for low-power applications and works on a system based on the Single Chip architecture. It utilizes a single bank organization, offering two banks of 8 kB and 16 kB of non-volatile memory respectively. The device has two types of operations: Erase-Only or Erase-and-Program. It employs a power supply voltage between 2.7V and 3.6V.

For non-volatile memory operations, the memory controller starts the Erase operation, which involves applying a negative voltage to the memory cells to achieve a desired charge state. Then, the programmer applies a programming pulse to the selected location, which will rewrite the data at that location. After the programming, the device performs a verification process to check whether the data has been correctly written or not. Finally, it outputs the results to the host device.

CY7C1263KV18-500BZXC Memory is a non-volatile, low power device that offers a wide variety of applications. Its advantages include its flexible architecture, fast erase and programming times, and robust operating temperature ranges. The device is reliable and capable of performing the operations required for a wide range of applications. It has been widely used in automotive, home appliances, communication, maintenance, and other industrial applications.

The specific data is subject to PDF, and the above content is for reference

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