CY7C1314KV18-333BZC

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CY7C1314KV18-333BZC is a kind of double data rate (DDR) synchronous dynamic random access memory (SDRAM) device which is developed with Sampling JEDEC compliant DDR standard. It is architected to deliver high bandwidth, low latency, and reliable operation in memory applications. It is to meet the performance and challenge of modern society’s most demanding computing requirements. This SDRAM device offers a variety of features and functions to meet the customers’ demands.

In terms of running speed, this memory can handle a write burst at 133MHz (266MT/s). From the point of latency, the device has 8-9 clock cycles write latency, and the memory bank Group is able to be populated with two banks in a device where two independent commands may be issued at a given time. This helps to reduce wait states considerably and increases system performance. This ensures that the execution of commands is done in a sequential manner and provides a much faster memory bus.

CY7C1314KV18-333BZC is well suited for high performance embedded applications, such as digital multimedia applications, gaming console, servers and embedded emory devices. Moreover, this memory is capable of operating in both 3.3V and 1.8V supply rails, so it can be used in the latest embedded designs.

The general working principle of this memory is to read data from a memory location, store it in an internal register, and then perform a write operation to the specified address. The data is stored in an electronic form in the internal registers and is written to the memory after being read from the memory. It is a common principle of operation for most asynchronous memories.

CY7C1314KV18-333BZC has an advanced internal architecture to bring forward an outstanding real-time performance and capacity. It has a wide range of programmable features that allow for increased functionality and production of high-performance products, including the ability to modify the order of operations and timing of memory transactions.

This device\'s bank architecture also offers the user multiple ways to access data. The different methodologies are dependent on the size of data being read or written, bank group interleaving, multiple activation of memory banks and addressing modes. The choice of the most suitable addressing mode depends on the application.

CY7C1314KV18-333BZC supports a variety of voltage supply ranges to guarantee the best performance required for the modern digital applications. The device operates in both a self-timed mode and a time-shared mode. The time-shared mode allows multiple devices to share bandwidth efficiently. The device has an eight-bit wide data bus, enabling it to transfer two bytes of data in a single clock cycle.

Finally, the device also offers non-volatile (NVR) and wear-leveling (WL) support. NVR allows a device to save production information and settings into its non-volatile memory. WL helps to maintain the lifetime of the device by distributing the workload evenly over the entire device, thus increasing the device\'s robustness and reliability.

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