CY7C1315BV18-200BZC

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CY7C1315BV18-200BZC is a high-performance memory device specifically designed to replace FPGAs and asynchronous SRAMs. It is a dual voltage device with an operating voltage of 1.8V and 3.3V. The device has four banks of 2 MB of SRAM and a banking matrix which allows the user to configure it to a variety of applications. It is a low power, low-cost solution for those applications that require a high-performance, small and flexible data storage device.

The CY7C1315BV18-200BZC memory offers high performance, low power consumption and a small footprint, making it an ideal choice for applications that require large amounts of high-speed storage. The device has an asynchronous interface, which allows it to be configured for many different types of data transfer such as read and write, byte, word, and block transfers. The device also offers auto program and auto refresh functions, which further reduce the power consumption of the device.

The device has a built-in 6-bit Error Checking and Correcting system that ensures error free data transfer. This system enables the device to quickly find and fix errors that may occur during the transfer of data. The device also has an integrated power regulator, which provides additional power savings compared to other types of memories.

The working principle of CY7C1315BV18-200BZC memory is simple; it consists of a flash memory controller and SRAM banks. The flash memory controller manages the data transfers and instructions from the host, while the SRAM banks are used for data storage. The device also includes an Advanced Boolean Arithmetic (ABR) interface to the embedded processor for fast arithmetic logic unit (ALU) operations, as well as a 8-bit multiplier and multiplexer.

The wide range of applications of CY7C1315BV18-200BZC memory device make it an attractive choice for many different applications, such as industrial control, telecom equipment, storage systems, and embedded systems. The onboard advanced Boolean Arithmetic (ABR) interface allows for fast ALU operations, making the device an excellent choice for advanced processing applications. In addition, the low power consumption and small footprint make it an ideal choice for battery powered and portable applications.

In conclusion, the CY7C1315BV18-200BZC is a high-performance, low-power memory device specifically designed to replace FPGAs and asynchronous SRAMs, making it an excellent choice for a wide range of applications. The onboard advanced Boolean Arithmetic (ABR) interface and low power allows for fast ALU operations, making it ideal for advanced processing applications, while its small footprint and low power consumption make it a great choice for battery-powered and portable applications. Additionally, the device features a built-in 6-bit Error Checking and Correcting system, allowing for accurate data transfers without the need for additional components.

The specific data is subject to PDF, and the above content is for reference