CY7C13201KV18-333BZXC

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CY7C13201KV18-333BZXC is an asynchronous static random access memory (SRAM) IC, belonging to the well-known Cypress Semiconductor NvSRAM memory products. In this article, we will discuss its application field and working principle.

Application Field

CY7C13201KV18-333BZXC is a low-power and high-performance asynchronous SRAM from the Cypress Semiconductor family. This IC is suitable for a range of application fields, such as medical technology, industrial and telecommunications products. The NvSRAM products offer a high level of data reliability, coupled with the advantages of lower system power consumption. Specifically, this IC has the following features:

• Flexible power supply voltage range: 2.7V to 3.6V
• High speed random reads/writes: 6 ns maximum
• Burst accesses: 8 ns maximum
• CMOS compatible input and output, with no noise and EMI
• Withstand up to 2,000V static discharge

CY7C13201KV18-333BZXC is used in a multitude of applications, ranging from automotive, medical and communications applications to industrial system control, distributed power systems, robotics and so on.

Working Principle

Since CY7C13201KV18-333BZXC is an asynchronous SRAM, this means that it does not require a clock and does not need to constantly synchronize its internal components before it can operate. Instead, it is activated by a single external signal and can be used immediately after the power is switched on. The basic internal structure of the IC consists of a dual-port memory array and associated control logic. The memory array consists of two 6-bit words and 64 bytes. Each 6-bit word is arranged in an 8 by 8 array.

The entire SRAM is divided into 8 blocks of 8 columns each. The read/write operations are controlled by a 32-bit control register, which can be written and read using dedicated address codes. CY7C13201KV18-333BZXC supports both burst and single access modes. In the burst mode, data is immeditately read or written during each cycle, while in the single access mode data is read or written only during the first cycle. Once the first cycle is completed, the next read/write operation should be performed.

The IC also features a four-bit Error Correction Code (ECC) as an error protection mechanism. ECC is a type of parity check, where a special code is calculated from the data and embedded in the memory array. If the data is corrupted, the ECC code can be used to detect the error and recover the data. This ensures that data integrity is maintained.

In summary, CY7C13201KV18-333BZXC is a low-power and high-performance asynchronous SRAM with a wide range of application fields. Its flexible power supply voltage range, high speed access and error correction code make it a reliable and high-performance memory IC.

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