| Allicdata Part #: | CY7C1339G-133AXET-ND |
| Manufacturer Part#: |
CY7C1339G-133AXET |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC SRAM 4M PARALLEL 100TQFP |
| More Detail: | SRAM - Synchronous Memory IC 4Mb (128K x 32) Paral... |
| DataSheet: | CY7C1339G-133AXET Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Write Cycle Time - Word, Page: | -- |
| Base Part Number: | CY7C1339 |
| Supplier Device Package: | 100-TQFP (14x20) |
| Package / Case: | 100-LQFP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 125°C (TA) |
| Voltage - Supply: | 3.15 V ~ 3.6 V |
| Memory Interface: | Parallel |
| Access Time: | 4ns |
| Series: | -- |
| Clock Frequency: | 133MHz |
| Memory Size: | 4Mb (128K x 32) |
| Technology: | SRAM - Synchronous |
| Memory Format: | SRAM |
| Memory Type: | Volatile |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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CY7C1339G-133AXET, memory integrated circuit (IC) which is used for static random access memory (SRAM), is a type of semi-conductor memory. The memory chip is equipped with 66-Mbits of high-speed SRAM which is used in high-speed demanding applications, such as networking and data warehousing. This chip utilizes CMOS technology to improve power dissipation while ensuring high performance and lower supply voltage. It has an 8/16/32-bit wide asynchronous as well as synchronous, pipelined and non-pipelined interface. It requires low current consumption with a 3.3v or 1.8V voltage supply.
Application Field:
CY7C1339G-133AXET is mainly used in high-speed data processing and retrieval applications. It is used in application processors, FPGAs, ASICs and DSPs for data intensive computing, digital signal processing tasks and for high-end file storage. It can also be used in embedded systems, medical and industrial applications. This chip provides high performance with low power consumption and excellent robustness.
Working Principle:
The working principle of CY7C1339G-133AXET is based on static random access memory (SRAM) technology. It uses a memory cell consisting of two cross-coupled inverters which act as flip flops that can store a bit of data. This chip utilizes CMOS technology to reduce power consumption while ensuring high performance. The chip is designed to operate at a 3.3 voltage or 1.8V voltage supply. It also has an 8/16/32-bit wide asynchronous as well as synchronous pipeline and non-pipelined interface. This chip is capable of achieving high speed and low latency when reading and writing data.
The memory chip has the capability to support faster memory access by supporting high-speed pipelined and non-pipeline operations. The chip also has the ability to support multiple high-speed operation simultaneously. This chip is also equipped with other features such as chip select and write enable, write protect, and write delay options. In addition to this, this chip has built-in error-correction codes and ECC functions for enhanced data accuracy.
To conclude, CY7C1339G-133AXET memory integrated circuit is an ideal choice for high-speed demanding applications where speed is important and low current consumption is critical. This chip has an 8/16/32-bit wide asynchronous as well as synchronous pipeline and non-pipelined interface, which makes it suitable for high-speed data processing and retrieval applications. It utilizes CMOS technology to improve power dissipation while ensuring high performance and lower supply voltage.
The specific data is subject to PDF, and the above content is for reference
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CY7C1339G-133AXET Datasheet/PDF