CY7C1365CV33-133AXC

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CY7C1365CV33-133AXC is a type of static random access memory (SRAM) device. It is a low-power, high-performance CMOS device used in many applications including embedded applications and computer memory. The device consists of an array of 8-bit memory cells, each connected to a common address, data, and control buses. Each memory cell is composed of two cross-coupled CMOS inverters connected in a flip-flop circuit configuration.

This particular device was first developed by Cypress Semiconductor Corporation, a major semiconductor manufacturer. The device is designed to provide fast access times and low power consumption for memory access applications. The device features an 8-bit wide data bus and can be accessed by a control bus. The internal structure of the SRAM device is composed of two distinct types of cells, each with two bit locations, one located in each of the two 8-bit wide data words.

The device is designed to operate at a maximum frequency of 133MHz. At this frequency, the device can access a maximum of eight 8-bit words or 64-bits at once. It is also capable of operating at slower speeds, such as 50MHz, which provides an access time of only 10ns. The device is organized with four independent memory blocks, each with a capacity of 16K words, which makes the device ideal for a variety of multiprocessor applications.

CY7C1365CV33-133AXC is ideal for applications requiring high bandwidth and low power consumption. It is commonly used in embedded systems, such as cell phones and PDAs, as well as applications in general programmable logic controllers (PLCs) and real-time information controllers (RTICS). Additionally, the device is suitable for high speed input/output (I/O) and data processing applications in network systems and storage systems.

In addition to its high performance and low power consumption, the device also provides important characteristics such as speed, reliability, and scalability. The device is designed to handle high-speed communications and data processing operations without sacrificing performance or power consumption. CY7C1365CV33-133AXC is also designed to provide easy scalability, allowing for the addition or removal of memory modules as needed for a variety of applications.

As a static random access memory device, CY7C1365CV33-133AXC uses a flip-flop circuit arrangement to store data. The data, or bits, are stored in the two flip-flops of the same cell. When the data is written to the memory location, the first flip-flop is set to the correct value, while the other flip-flop is set to the opposite value of the first one. When the memory location is read, the two values are compared, and the data is read into the controller.

The device is designed to operate at a supply voltage of 3.3 V and is capable of dissipating a maximum of 1W. The device is also designed to meet MIL-STDOUT-883C and JESC 9652 standards. It is a RoHS compliant device and is manufactured with advanced CMOS processes.

CY7C1365CV33-133AXC is an ideal memory device for many low-power and high-performance applications. With its low power consumption, fast access times and scalability, the device is well suited for a range of embedded and computer applications. The device is also suitable for high speed input/output and data processing applications in network systems and storage systems.

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