CY7C136E-25NXC

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Memory devices are widely used in computers, servers, and other high-performance applications. High-speed integrated circuits, such as the CY7C136E-25NXC, are used as memory devices by providing fast and reliable performance. Included in this article is information about the application field and working principle of CY7C136E-25NXC.

The CY7C136E-25NXC memory device is a 20-pin ultra low-voltage static RAM marketed by Harris Semiconductor\'s Enhanced Memory Products division. This device is a 20-pin Dual In-line Memory Module (DIMM) that provides 256Kbits of static RAM storage. It features 25ns cycle times and a single +3.3V supply. The memory is organized as 32K x 8 bits and can be used with address and data buses of 8, 16, and 32 bits.

The application of CY7C136E-25NXC is widely applicable in various digital circuits and is mostly used for storing data and programs. Some common applications include embedded control, graphics accelerator and audio DSP RAM, as well as digital signal processing, instrumentation, communications, workstations and graphics memory. Additionally, its uses are not limited to the above-mentioned areas, but can be used in many other systems and applications as well.

In order to store data, the CY7C136E-25NXC device employs a form of Dynamic Random Access Memory (DRAM) known as Static Random Access Memory (SRAM). This type of memory is also known as "static DRAM". Unlike asynchronous DRAM (DRAM), static RAM is quite fast. This is because static RAM can sustain a continuous data stream while DRAM needs to be periodically refreshed. Additionally, static RAM has a lower risk of data failing compared to DRAM.

Using Static RAM, data is stored in cells composed of two or four transistors and two capacitors. When the memory chip is not actively being used, the capacitance in each cell holds the data. To write data, a bit line is inverted through transistors. To read data, the bit line is checked with voltage. This is known as a static RAM cycle. These memory cycles are accomplished with the help of different address lines, data lines and other control signals. The control signals tell the RAM which cell is being accessed for writing or reading of data.

CY7C136E-25NXC memory devices are used in a large variety of applications and have a huge capacity available. Its small size and low power requirements allow it to be used in a variety of applications and systems. Additionally, its fast speed and high-reliability make it an ideal choice for data storage. As memory devices continue to become faster, more reliable and more affordable, the use of CY7C136E-25NXC is expected to increase as more applications begin to require high-speed, low-power, reliable memory.

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