CY7C1371D-133BGC Allicdata Electronics
Allicdata Part #:

CY7C1371D-133BGC-ND

Manufacturer Part#:

CY7C1371D-133BGC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 18M PARALLEL 119PBGA
More Detail: SRAM - Synchronous Memory IC 18Mb (512K x 36) Para...
DataSheet: CY7C1371D-133BGC datasheetCY7C1371D-133BGC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: CY7C1371
Supplier Device Package: 119-PBGA (14x22)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135 V ~ 3.6 V
Memory Interface: Parallel
Access Time: 6.5ns
Series: NoBL™
Clock Frequency: 133MHz
Memory Size: 18Mb (512K x 36)
Technology: SRAM - Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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CY7C1371D-133BGC is a type of synchronous SRAM memory, and it belongs to the low-power SRAM family. In this family, each device can store up to 16K bits of data, and it can be configured with different bit rates, package sizes and access speeds. This makes it ideal for embedded applications that need fast access and low power consumption. The CY7C1371D-133BGC is readily available in both 3V and 5V logic supply versions.

In terms of application fields, the CY7C1371D-133BGC synchronous SRAM is perfect for applications that require low power and fast access. Examples of such applications include automotive infotainment systems, industrial controllers, medical equipment, access control systems, and robotics.

The working principle of the CY7C1371D-133BGC is based on the concept of a memory cell. A memory cell is a group of two or more transistors that are connected together in such a way that the output from one transistor is the input to another. When the memory cell is activated, the output from the first transistor is then used as the input to the second transistor. This is referred to as the “write” operation, since the data is being written to the memory cell. When the memory cell is deactivated, the output from the second transistor is then used as the input to the first transistor. This is referred to as the “read” operation, since the data is then being read from the memory cell. The CY7C1371D-133BGC synchronous SRAM memory is composed of multiple memory cells that are arranged in an addressable array.

The CY7C1371D-133BGC synchronous SRAM is highly reliable due to its design. It has a built-in error-checking system that provides effective memory reliability. It also supports a wide range of speeds and access timings, making it suitable for a variety of different embedded applications. The device also has low-power consumption and a long-term data retention, making it an attractive option for a variety of applications.

The CY7C1371D-133BGC synchronous SRAM memory has a wide range of uses in embedded systems. It is ideal for applications that require fast access and low power consumption. It is also highly reliable due to its built-in error checking and data retention capabilities. Additionally, it supports a wide range of speeds and access timings, making it suitable for a variety of different applications. With all these features, the CY7C1371D-133BGC is the perfect memory solution for any embedded system.

The specific data is subject to PDF, and the above content is for reference

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