CY7C1413KV18-300BZXC Allicdata Electronics
Allicdata Part #:

CY7C1413KV18-300BZXC-ND

Manufacturer Part#:

CY7C1413KV18-300BZXC

Price: $ 36.36
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 36M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, QDR II Memory IC 36Mb (2M x 18...
DataSheet: CY7C1413KV18-300BZXC datasheetCY7C1413KV18-300BZXC Datasheet/PDF
Quantity: 136
1 +: $ 33.04980
10 +: $ 30.64890
25 +: $ 29.56510
50 +: $ 28.82980
100 +: $ 25.25030
250 +: $ 24.55380
Stock 136Can Ship Immediately
$ 36.36
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (2M x 18)
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)
Base Part Number: CY7C1413
Description

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The CY7C1413KV18-300BZXC is a 36-pin, 512K bit (32K X 16) asynchronous SRAM from Cypress Semiconductor, used primarily in memory (RAM) applications. It consists of an array of 32,768 eight-bit words, organized as an array of 16-bit words. The device is designed to provide fast access to RAM data and can be used in a wide variety of applications, including embedded systems, instrumentation, data transporting and storage, data logging, and industrial controllers.

Features

The CY7C1413KV18-300BZXC features an asynchronous bus-interface, which provides a direct interface to the microprocessor bus or any other bus or interface. The device also features a full timing scheme, enabling variable programmable read and write access times ranging from 15ns to 65ns.

The device has a low-power design, with some parts consuming only 70mW during standby mode. Additionally, the device is distributed with a noise reduction filter applied, which helps minimize noise and surge levels.

The CY7C1413KV18-300BZXC has plenty of address lines, making it possible for up to 32K of data and memory to be accessed at once. Additionally, the device also has an active low chip select line. The device is organized with 512K of data in 32K words.

Application Field

The CY7C1413KV18-300BZXC is used primarily in memory applications, such as embedded systems, instrumentation, data transporting and storage, data logging and industrial controllers. The device is particularly suited for applications that require low power consumption or fast access speeds.

The device is also used in applications that require a large amount of addressable memory. With up to 32K of data and memory accessible at once, the device can be a great choice for data logging and other memory-intensive applications.

Working Principle

The CY7C1413KV18-300BZXC is an asynchronous SRAM, meaning it can access data independent of the clock. This makes the device suitable for use in applications where the timing of data access is unpredictable or non-deterministic.

The device has two ports for data and address access, a write/take data (TDA) port and a read/take address (RTA) port. Data is written to or read from the device through these ports, which can be connected directly to a processor bus or other interface.

The device uses address lines to determine which memory location is to be accessed, while the write or read signal indicates whether the data is to be written or read. The chip select line is used to activate the device, while the write/read signal provides timing information.

The device can provide fast access to RAM data, with read and write access times ranging from 15ns to 65ns. Additionally, the device features a low-power design, with some parts consuming only 70mW during standby mode.

The specific data is subject to PDF, and the above content is for reference

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