CY7C1420KV18-300BZXC Allicdata Electronics
Allicdata Part #:

428-3303-ND

Manufacturer Part#:

CY7C1420KV18-300BZXC

Price: $ 36.36
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 36M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, DDR II Memory IC 36Mb (1M x 36...
DataSheet: CY7C1420KV18-300BZXC datasheetCY7C1420KV18-300BZXC Datasheet/PDF
Quantity: 136
1 +: $ 33.04980
10 +: $ 30.64890
25 +: $ 29.56510
50 +: $ 28.82980
100 +: $ 25.25030
250 +: $ 24.55380
Stock 136Can Ship Immediately
$ 36.36
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 36Mb (1M x 36)
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)
Base Part Number: CY7C1420
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CY7C1420KV18-300BZXC is a popular memory component commonly present in many electronic devices. This component is commonly used in a variety of applications, such as embedded systems, consumer electronics, automotive, and medical applications. It is available in a VTLA package and suitable for multiple applications, including high speed computation, data storage and memory access.

The CY7C1420KV18-300BZXC is a single component with integrated arrays of random access memory (RAM) cells. It has a capacity of up to 8 GB of volatile memory, with a wide range of access speeds. The component allows for multiple applications and configurations that enable users to access information quickly, efficiently and with minimal power draw.

The CY7C1420KV18-300BZXC contains low power SRAM cells that are programmable and have clocked addressing capability. The on-chip address registers protect the memory from being over written and enable users to use multiple memory locations for a specific application, thereby reducing power requirements and resulting in higher performance. The component also provides a fail-safe system that ensures data integrity in the event of an unexpected power failure.

The working principle of the CY7C1420KV18-300BZXC is based on the binary code of memory operations. Each memory cell consists of several subsystems, such as address and decoding logic, address latches, write logic, read logic and sense amplifiers. All of these subsystems are working together to enable the users to access the data stored in the memory.

When a user accesses the memory, the address and decoding logic subsystem evaluates the address and determines which memory cell is to be accessed. Then, the address latches stores the address information in order to maintain the address continuity across multiple memory operations. After this, the write logic subsystem is responsible for writing the requested data in to the memory cell. Lastly, the read logic subsystem is used to retrieve the data from the memory cell and provide it to the user.

The CY7C1420KV18-300BZXC is a versatile memory component and is ideal for a variety of applications, such as embedded systems, consumer electronics, automotive, and medical applications. This component offers users great features in terms of speed, capacity and efficiency. Moreover, its low power SRAM cells and fail-safe system ensure data integrity and reliability.

The specific data is subject to PDF, and the above content is for reference

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