CY7C1424AV18-250BZC

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CY7C1424AV18-250BZC application field and working principle

The CY7C1424AV18-250BZC is a 128K x 24bit 2.5V Asynchronous Static Random Access Memory (SRAM) that belongs to the memory category. This device features a 16-Mbits memory with integrated Configuration, Zero Delay and Drive signals for low power applications. It is an ideal choice for digital signal processing systems and communication systems, as it reduces power consumption and improves system performance.

CY7C1424AV18-250BZC is designed to provide high-speed access and a low power draw, with low power modes including a power-down & standby. It also features a Sleep Mode to reduce the power consumption even further when idle. The device has the capability to detect and recover from single bit errors, making it well suited for data-sensitive applications.

The Configuration signals for this device include Chip Selects (CS), Write Enable (WE), Output Enable (OE) and Bus Sizing/Page Mode select. The Write Enable control signal is valid before, during, and after the write cycle to control the data flow from the device. It enables the device to write data into the memory locations that are specified via the Bus Sizing/Page Mode select. The chip select signals are used to enable and disable the memory device, the Output Enable signal is used to enable or disable the outputs in active mode.

The working principle of the CY7C1424AV18-250BZC device is based on the storage of charge in memory cells, allowing the stored information to remain stored without any external power supply. The device is comprised of a number of memory cells arranged in an array of rows and columns. Each cell contains a variable capacitor that stores a certain amount of charge corresponding to the state of the stored bit. A row decoder and column selector are used to select a specific memory location in the device. The row decoder and column selector send signals to the selected memory cell, allowing the device to read or write data from/to the cell. The device can also detect and recover from single bit errors.

The CY7C1424AV18-250BZC SRAM device is a great choice for low power and high-speed applications. It features low power modes, a power-down & standby mode and a sleep mode, making it an ideal memory solution for digital signal processing systems and communication systems. It is also capable of detecting and recovering from single bit errors, and can be used in data-sensitive applications. The device is versatile, with Configuration and Drive signals making it easy to interface with other devices.

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