CY7C1512AV18-200BZC

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Synchronous, QDR II
Memory Size:	72Mb (4M x 18)
Clock Frequency:	200MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.9 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	165-LBGA
Supplier Device Package:	165-FBGA (15x17)
Base Part Number:	CY7C1512

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CY7C1512AV18-200BZC: Memory Application Field and Working Principle

Introduction

CY7C1512AV18-200BZC is a type of Static RAM (SRAM) produced by Cypress Semiconductor. It is a 16K x 8 low-power, low-voltage memory that presents the user with an excellent solution for applications with severe power constraints. It has an access time of 8ns which makes it perfectly suitable for embedded applications. The robust package options and the ease of use of this device make it an ideal choice for single and multiple-data-rate memory requirements.

Application Field

The CY7C1512AV18-200BZC can be used in various embedded applications such as cell phones, home entertainment systems, personal digital assistants (PDAs), networking equipment, digital cameras and medical devices. It is suitable for a wide range of storage requirements, from simple data storage to large memories for video and audio data. The low-power capabilities of this RAM make it an ideal choice for portable devices used in the medical industry and other battery-powered applications where power-saving must be a consideration. The compact BGA packages mean that this RAM can be used in applications where board space is at a premium. The flexibility of these packages allows the user to customize their design with 32-bit and 64-bit packages. The CY7C1512AV18-200BZC is both cost-efficient and powerful for a variety of embedded data storage solutions.

Working Principle

The CY7C1512AV18-200BZC utilizes a memory cell architecture that is able to store a single word of 8 bits, and is organized with 128 bytes in a row and 128 rows in a bank. This architecture provides a random access ability with an access time of 8ns. The memory is controlled by an external control bus, which enables data to be written into or read from the RAM. A write operation requires that the memory address and the data are clocked into the RAM. The CY7C1512AV18-200BZC features an asynchronous write mode, making it suitable for use in asynchronous applications.In addition to being able to read and write data, this memory also supports page writes. This feature allows the user to write multiple bytes with a single write command, significantly reducing the overhead imposed by the control bus.

Conclusion

The CY7C1512AV18-200BZC provides an efficient way to store data for embedded applications. Its excellent power-management features, low-voltage specifications, and high speed make it an ideal choice for many applications. The supported page write feature makes it much easier to handle larger memory operations. This RAM also offers flexibility in terms of the packages it offers and its cost-efficiency. Overall, this type of RAM is well suited for use in a multitude of applications, from simple memory operations to complex data storage requirements.

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