CY7C1513KV18-250BZI Allicdata Electronics
Allicdata Part #:

428-3404-ND

Manufacturer Part#:

CY7C1513KV18-250BZI

Price: $ 104.04
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 72M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, QDR II Memory IC 72Mb (4M x 18...
DataSheet: CY7C1513KV18-250BZI datasheetCY7C1513KV18-250BZI Datasheet/PDF
Quantity: 1000
1 +: $ 94.58190
10 +: $ 82.43830
25 +: $ 82.21150
50 +: $ 79.99880
Stock 1000Can Ship Immediately
$ 104.04
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 72Mb (4M x 18)
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)
Base Part Number: CY7C1513
Description

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One of the important components that are used in memories are the type of synchronous SRAM called CY7C1513KV18-250BZI. This type of SRAM is made of 256K x 16b FLASH memory and can store up to 256K bits of data. It is a synchronous type of memory, meaning it is accessed on a clock signal. This synchronous SRAM has a high-speed operating frequency of up to 25 MHz.

In terms of applications, the CY7C1513KV18-250BZI is used in consumer and industrial electronics, among other fields. In consumer electronics, this synchronous SRAM can be found in a wide range of products such as digital cameras, portable audio players, and embedded systems, among other products. It is also used in a range of industrial electronics, such as control and communications systems, embedded systems, instrumentation and automation systems.

The main feature of the CY7C1513KV18-250BZI is that it supports two async/sync modes of operation. The sync mode is intended for applications that require high speed, while the async mode allows for slower speeds and can be used for low-power consumption applications. This memory also supports a power-on reset (POR) signal and comes with a 3-state buffer enabling for external devices to be interfaced with the memory. Additionally, the synchronous SRAM also features a write protection feature that prevents illegal access to the memory.

The working principle of the CY7C1513KV18-250BZI is based on static logic. The SRAM core is made up of a series of flip-flops and transistors, and the chip contains both sense amplifier and multiplexers. This synchronous SRAM allows for the access time of the memory to be significantly reduced as data can be accessed within one clock cycle. It also provides a direct connection to the address bus and data bus, allowing for direct accessing to the memory.

The CY7C1513KV18-250BZI is an important component for different memory types, offering significant advantages in terms of speed and power. It is used for a range of consumer and industrial electronics, and provides a high-speed operating frequency of up to 25 MHz. Additionally, this synchronous SRAM also supports two async/sync modes of operation, as well as a power-on reset (POR) signal and a write protection feature, making it a reliable memory component.

The specific data is subject to PDF, and the above content is for reference

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