| Allicdata Part #: | CY7C1550KV18-400BZXI-ND |
| Manufacturer Part#: |
CY7C1550KV18-400BZXI |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC SRAM 72M PARALLEL 165FBGA |
| More Detail: | SRAM - Synchronous, DDR II+ Memory IC 72Mb (2M x 3... |
| DataSheet: | CY7C1550KV18-400BZXI Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Synchronous, DDR II+ |
| Memory Size: | 72Mb (2M x 36) |
| Clock Frequency: | 400MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.7 V ~ 1.9 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 165-LBGA |
| Supplier Device Package: | 165-FBGA (13x15) |
| Base Part Number: | CY7C1550 |
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Memory: The CY7C1550KV18-400BZXI is a memory chip used in a variety of applications. It is a high-speed, low-power Static Random Access Memory (SRAM) that is specially designed for high performance applications.
The CY7C1550KV18-400BZXI is an 18Mbit RAM device that has a four-bit architecture. It has a total of 8,388,608 memory cells, each with four bits of data stored in a single cell. The access time of this memory chip is 40 nanoseconds, and it can handle up to 9.6 million word accesses per second.
The device is specifically designed to provide a high-speed, low-power memory solution for digital signal processing (DSP), communications, multimedia, and embedded applications. It is used in a variety of systems such as mobile phones, smart TVs, set top boxes, routers, and automotive systems.
The CY7C1550KV18-400BZXI operates on a single 3.3 V power supply and provides an optimal combination of speed, power and area. It is designed to be a low-power, high-speed solution for embedded system designers with applications such as embedded media processing, image processing, wireless, networking, and storage.
The working principle of CY7C1550KV18-400BZXI is based on the principle of Static Random Access Memory (SRAM). SRAM is a type of memory that stores data without the need for a refresh cycle. This makes it faster and more reliable than other forms of memory. The chip is organized as four banks of 4,194,304 cells each, allowing for simultaneous read and write operations from four different ports. This makes it a suitable solution for applications that require high performance and low power.
The device also provides several features such as a self refresh support, programmable clock rate, power-down mode, burst clocks, data retention mode, and a security register. The device also has an internal memory built-in that stores the configuration settings and data. This eliminates the need for an external memory chip and simplifies system design.
The CY7C1550KV18-400BZXI is a high performance, low power memory device that is ideal for a variety of applications such as DSP, communications, embedded systems, and multimedia processing. It provides an optimal combination of speed, power and area for embedded system designs for embedded media processing, image processing, wireless, networking, and storage.
The specific data is subject to PDF, and the above content is for reference
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CY7C1550KV18-400BZXI Datasheet/PDF