CY7C199C-12VXI Allicdata Electronics
Allicdata Part #:

CY7C199C-12VXI-ND

Manufacturer Part#:

CY7C199C-12VXI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 256K PARALLEL 28SOJ
More Detail: SRAM - Asynchronous Memory IC 256Kb (32K x 8) Para...
DataSheet: CY7C199C-12VXI datasheetCY7C199C-12VXI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ
Base Part Number: CY7C199
Description

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The CY7C199C-12VXI is a type of memory, specifically an asynchronous static random access memory (SRAM). It is used in a variety of applications, most notably in computer and other electronic systems. As an asynchronous SRAM, the CY7C199C-12VXI is an ideal choice for processing data quickly and reliably. It is designed to have low power consumption and a high speed data transfer rate, making it well-suited for applications where speed and efficiency are essential.

The CY7C199C-12VXI is based on the block transfer 12-bit asynchronous SRAM technology, which can be used for applications where the highest level of integration of data is required. It utilizes a dual-port architecture, meaning that two separate banks are available in the same device. This allows multiple access interfaces to the device, providing a higher level of flexibility. Its two ports also enable simultaneous access and simultaneous write operation, making it ideal for high-speed data transfer.

The CY7C199C-12VXI has a 240-pin, 484-ball Grid Array (GLA) package, which helps to minimize power consumption, making it very efficient. In addition, its array architecture reduces distortion caused by crosstalk, resulting in a higher data rate and greater accuracy. Furthermore, the high speed of its memory makes it ideal for applications such as data processing and system-on-chip (SoC) designs.

The working principle of the CY7C199C-12VXI is quite simple: it consists of an array of cells, each cell containing information that can be accessed by addressing them. When the cells are addressed, the data is read or written. Address decoding is used to control which cell is accessed. The address decoding process then triggers the actual transfer of data within the memory. The actual transfer of data is achieved by a technique known as pre-fetching, in which the next cell is loaded into the output buffers before it is actually accessed. This increases the speed of the memory operation considerably.The CY7C199C-12VXI is heavily used in various applications due to its high speed and capacity. It is used in high-performance applications such as network routers, network switches, digital signal processors, and embedded controllers. It is also used in low power applications such as personal digital assistants (PDAs), cellular phones, and personal computers. Additionally, it can be used in automotive, automotive electronics, and educational applications. To summarize, the CY7C199C-12VXI is a type of asynchronous static random access memory (SRAM) used in a variety of applications that require high speed and capacity. It utilizes a dual-port architecture, allowing simultaneous access and write operation. Its 484-ball Grid Array (GLA) package minimizes power consumption, while its pre-fetching technique helps to increase the speed of data transfer. In conclusion, the CY7C199C-12VXI is an ideal choice for applications that require high speed and efficiency.

The specific data is subject to PDF, and the above content is for reference

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