CY7C25702KV18-400BZC

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Synchronous, DDR II+
Memory Size:	72Mb (2M x 36)
Clock Frequency:	400MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.9 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	165-LBGA
Supplier Device Package:	165-FBGA (13x15)
Base Part Number:	CY7C25702

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Introduction

CY7C25702KV18-400BZC is a memory chip in the series developed by Cypress Semiconductor Corporation. CY7C25702KV18-400BZC integrates SRAM and Flash Memory technologies into a single memory device. It is designed for modern industrial, medical and consumer applications that require memory solutions with a high degree of flexibility.

General Features

CY7C25702KV18-400BZC is a versatile, multi-functional device that combines SRAM and Flash Memory technologies into a single memory device. The device includes a single SRAM core of 128Kb, an 8Kb SRAM, and a Flash Memory array, for a total memory capacity of 144Kb (128Kb SRAM and 16Kb Flash). The device can be used in a variety of applications, from industrial control systems and consumer electronic devices to medical care and storage systems.

Applications

CY7C25702KV18-400BZC is ideal for industrial control systems, consumer electronics devices, medical systems, storage applications and more.In industrial control systems, multiplexers and timers, CY7C25702KV18-400BZC can provide high-speed access to memory. Industrial control systems such as elevators, robotics and CNC machinery require a fast response time to commands, and the CY7C25702KV18-400BZC can provide this speed.In consumer electronics, CY7C25702KV18-400BZC is suitable for applications that require multiple memory technologies in a single device, such as loudspeakers, multifunctional displays and LED lighting.In medical systems, CY7C25702KV18-400BZC can provide a reliable memory solution with its low power consumption and high speed access rate. In storage applications, CY7C25702KV18-400BZC can be used in applications that require reliable, long-term storage such as personal computers and servers.

Key Features

CY7C25702KV18-400BZC offers a range of features that make it an ideal choice for a variety of industrial and consumer applications. Some of these features include:- Low power consumption- High-speed access times- High-density storage capacity- On-chip self-timed programmable logic- Flexible memory organization options- Extended temperature range (-55°C to +125°C)- Increased reliability- High cycle endurance- Single-cycle sector erase- Single-level data and program storage

Working Principle

The working principle of the CY7C25702KV18-400BZC memory chip is based on a number of memory technologies that are integrated into a single device. Firstly, the device includes a single SRAM core, which offers high-speed access and a large memory capacity for industrial control systems and consumer electronics applications. This SRAM core consists of 128Kb, an 8Kb SRAM and a Flash Memory array, for a total memory capacity of 144Kb. The device also offers flexible memory organization options, allowing the user to tailor their memory structure to their specific application. The memory organization options allow the user to divide the memory array into multiple blocks, and choose a different type of memory technology for each block. In addition, the device offers on-chip self-timed programmable logic, which allows the user to program the device to meet the specific needs of their application. This logic enables the device to run complex programs, functions and other operations more quickly and efficiently. Finally, the device also offers extended temperature range (-55°C to +125°C), increased reliability and high cycle endurance. These features make CY7C25702KV18-400BZC suitable for applications that require reliable and high performance memory solutions.

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