CYD18S36V18-167BBAI Allicdata Electronics
Allicdata Part #:

CYD18S36V18-167BBAI-ND

Manufacturer Part#:

CYD18S36V18-167BBAI

Price: $ 187.23
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 18M PARALLEL 256FBGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 18Mb (512K...
DataSheet: CYD18S36V18-167BBAI datasheetCYD18S36V18-167BBAI Datasheet/PDF
Quantity: 41
1 +: $ 187.23000
10 +: $ 184.23000
100 +: $ 179.12000
1000 +: $ 172.01000
10000 +: $ 160.89000
Stock 41Can Ship Immediately
$ 187.23
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: CYD18S36
Supplier Device Package: 256-FBGA (17x17)
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
Memory Interface: Parallel
Access Time: 4ns
Series: --
Clock Frequency: 167MHz
Memory Size: 18Mb (512K x 36)
Technology: SRAM - Dual Port, Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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The CYD18S36V18-167BBAI is one of the best in its memory class. It is a single-chip, double-data rate Synchronous DRAM with an integrated register, which makes it ideal for high-performance metrics. It is suitable for high speed memory applications such as data buffering and caching, image processing, communications and networking, as well as for any other applications where speed is a priority.

The CYD18S36V18-167BBAI comes with an advanced 4-bank organization. Each bank has its own independent data bus and address bus, allowing fast retrieval and write speeds. This feature is particularly useful in applications where a large amount of data needs to be quickly located, allowing applications to take less time to complete tasks. It also allows multiple tasks to be completed in parallel, allowing the overall speed of the application to be increased.

The advanced register design provides a high-performance interface, which allows the architecture to be scaled to larger configurations. Each module contains a set of command registers, which can be used to control the operation of the module. The registers can also be used for reporting performance, and for configuring the user-defined parameters. This allows the device to be used in a wide variety of systems with minimal configuration effort.

The working principle of the CYD18S36V18-167BBAI is based on a synchronous dynamic random access memory. It works by having a set of memory cells, with each memory cell placed at a specific location in memory. When the memory is addressed, it retrieves the contents of the targeted cell as well as its surrounding cells, allowing for fast read and write speeds. The synchronous nature allows all of the cells in a structure to be read and written to at the same time, which is a critical component of the high speed memory design.

The CYD18S36V18-167BBAI is an ideal choice for high-performance memory applications. Its high speed, along with its advanced register design, makes it well suited to a wide variety of tasks. Furthermore, its 4-bank organization allows for parallel operation and quick access to large amounts of data, allowing applications to be completed faster than ever before.

The specific data is subject to PDF, and the above content is for reference

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