CYD18S72V-100BBI Allicdata Electronics
Allicdata Part #:

CYD18S72V-100BBI-ND

Manufacturer Part#:

CYD18S72V-100BBI

Price: $ 223.97
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 18M PARALLEL 484FBGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 18Mb (256K...
DataSheet: CYD18S72V-100BBI datasheetCYD18S72V-100BBI Datasheet/PDF
Quantity: 14
1 +: $ 223.97000
10 +: $ 217.25100
100 +: $ 212.77100
1000 +: $ 208.29200
10000 +: $ 201.57300
Stock 14Can Ship Immediately
$ 223.97
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 18Mb (256K x 72)
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 484-BGA
Supplier Device Package: 484-FBGA (23x23)
Base Part Number: CYD18S72
Description

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Memory is an essential part of any computer system. It is the physical hardware which stores data, programs, and other information that the computer needs to use or execute. The type of memory used will be determined by the needs and requirements of the computer system. The CYD18S72V-100BBI is a type of memory that is used in industrial computers, servers and other systems that need to be reliable and fast. In this article, we will discuss the application field and working principle of the CYD18S72V-100BBI.

The CYD18S72V-100BBI is a type of synchronous Dynamic Random Access Memory (DRAM). It is a 4Mb memory device that is used in industrial computers and server systems. The device has a wide range of applications, including industrial control systems, communication systems, embedded systems and various scientific and commercial applications. It is a reliable, high-performance memory device that is designed to be used in mission-critical applications.

The CYD18S72V-100BBI is a DRAM device with a 4Mb organized as 2M words of 18 bits each. It operates at a data rate of 100MHz and is capable of transferring data at up to 800MB/sec. The device has been designed for high speed, high power and reliable operation. It has a wide operating temperature range and can operate in both high and low voltage conditions.

The working principle of the CYD18S72V-100BBI is based on the principle of DRAM technology. DRAM is a type of memory that stores data as charge on capacitors. The capacitors hold an electric charge that is proportional to the voltage applied to them. When the memory is powered up, each capacitor is placed in a predetermined initial state. The charge of the capacitor then represents either a 0 or a 1. The data is then stored in the form of these 0s and 1s.

When a memory location is to be written, the row and column addresses are supplied to the memory. The appropriate data is then written to the specified location. To read the data, the addresses are supplied and the data is read from the specified location. The data is then stored in the latches of the memory and is outputted as a retrieved data value.

The CYD18S72V-100BBI is a reliable and high-performance type of memory device that is used in industrial computer systems and server systems. It has a wide operating temperature range and a high data rate. It is a 4Mb memory device designed for mission-critical applications, and its working principle is based on the principles of DRAM technology. The device is capable of transferring up to 800MB/sec and it is designed for reliability, high speed and power.

The specific data is subject to PDF, and the above content is for reference

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