Allicdata Part #: | 428-4165-ND |
Manufacturer Part#: |
CYDM256B16-55BVXI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 256K PARALLEL 100VFBGA |
More Detail: | SRAM - Dual Port, MoBL Memory IC 256Kb (16K x 16) ... |
DataSheet: | CYDM256B16-55BVXI Datasheet/PDF |
Quantity: | 748 |
Series: | -- |
Packaging: | Tray |
Part Status: | Last Time Buy |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, MoBL |
Memory Size: | 256Kb (16K x 16) |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V, 2.4 V ~ 2.6 V, 2.7 V ~ 3.3 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-VFBGA |
Supplier Device Package: | 100-VFBGA (6x6) |
Base Part Number: | CYDM |
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CYDM256B16-55BVXI Application Field and Working Principle
CYDM256B16-55BVXI is a type of memory device, one of the many components found in electronic and computing equipment. Its name stands for “CYDRAM256 Bites, 16-bit Bus, 55 ns Access Time, Variable Voltage Interface”. It is also known as vertical flash memory (VFM) due to its unique design. This type of memory device is commonly used in a wide range of industries, including industrial automation, home electronics, military applications and medical equipment. In this article, we explore the purpose and working principle of the CYDM256B16-55BVXI.
Purpose
The main purpose of the CYDM256B16-55BVXI is to provide on-chip non-volatile memory that can be read and written. This makes it ideal for applications which require data storage that can survive power outages and system shut downs. The memory also has high speeds, allowing fast data access, making it a good choice for devices that need to access data in real time.
Working Principle
The CYDM256B16-55BVXI works by using a series of vertical columns of nanometer-sized memory cells. These cells are arranged in an alternating structure, with each “on-board” group of cells separated by a layer of insulation. When writing data to the memory, a current is pulled through the selected columns, switching the cells between “ON” and “OFF” states, allowing the data to be written. When the device is in read mode, the cells are scanned in sequence and the data is retrieved from the memory.
By using a vertical structure, the device drastically reduces the area taken up by each cell, which dramatically increases the storage density of the device and improves the overall performance. Additionally, the vertical structure also helps to reduce the power consumption of the device, allowing for continuous operation even in low power environments.
Conclusion
In conclusion, the CYDM256B16-55BVXI represents an advantage that is often used in advanced applications and demanding environments. Its advanced design allows it to not only provide high speeds, but also maintain a low power consumption. With its wide range of applications, this memory device is indispensable in a variety of industries and applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
CYDMX256A16-90BVXI | Cypress Semi... | -- | 100 | IC SRAM 256K PARALLEL 100... |
CYDMX128A16-65BVXI | Cypress Semi... | -- | 100 | IC SRAM 128K PARALLEL 100... |
CYDMX128B16-65BVXI | Cypress Semi... | -- | 200 | IC SRAM 128K PARALLEL 100... |
CYDM256B16-55BVXI | Cypress Semi... | -- | 748 | IC SRAM 256K PARALLEL 100... |
CYDM064B16-55BVXI | Cypress Semi... | -- | 1000 | IC SRAM 64K PARALLEL 100V... |
CYDM128B16-55BVXI | Cypress Semi... | -- | 1000 | IC SRAM 128K PARALLEL 100... |
CYDM064B08-40BVXI | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 64K PARALLEL 100V... |
CYDM064B08-55BVXI | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 64K PARALLEL 100V... |
CYDM064B16-40BVXI | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 64K PARALLEL 100V... |
CYDM064B16-55BVXIT | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 64K PARALLEL 100V... |
CYDM128B08-40BVXI | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 128K PARALLEL 100... |
CYDM128B08-55BVXI | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 128K PARALLEL 100... |
CYDM128B16-40BVXI | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 128K PARALLEL 100... |
CYDM128B16-40BVXIT | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 128K PARALLEL 100... |
CYDM128B16-55BVXIT | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 128K PARALLEL 100... |
CYDM256B16-40BVXI | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 256K PARALLEL 100... |
CYDM256B16-40BVXIT | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 256K PARALLEL 100... |
CYDMX064A16-65BVXI | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 64K PARALLEL 100V... |
CYDMX064A16-90BVXI | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 64K PARALLEL 100V... |
CYDMX128A16-65BVXIT | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 128K PARALLEL 100... |
CYDMX128A16-90BVXI | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 128K PARALLEL 100... |
CYDMX256A16-65BVXI | Cypress Semi... | -- | 1000 | IC SRAM 256K PARALLEL 100... |
CYDMX064B16-65BVXI | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 64K PARALLEL 100V... |
CYDM256B16-55BVXIT | Cypress Semi... | 5.1 $ | 1000 | IC SRAM 256K PARALLEL 100... |
CYDM064B16-40BVXIT | Cypress Semi... | 0.0 $ | 1000 | IC SRAM 64K PARALLEL 100V... |
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