CYDMX128A16-65BVXI

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, MoBL
Memory Size:	128Kb (8K x 16)
Write Cycle Time - Word, Page:	65ns
Access Time:	65ns
Memory Interface:	Parallel
Voltage - Supply:	1.8 V ~ 3.3 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	100-VFBGA
Supplier Device Package:	100-VFBGA (6x6)
Base Part Number:	CYDMX

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Memory: CYDMX128A16-65BVXI Application Field And Working Principle

CYDMX128A16-65BVXI is one of the popular x16 memory devices in the XYDMX family. CYDMX devices combine the high-performance of SRAM and the low power of DRAM for use in a wide range of application fields, including industrial, embedded, automotive and consumer applications. This article will discuss the use and working principles of CYDMX128A16-65BVXI in detail.CYDMX128A16-65BVXI is a dynamic random access memory (DRAM), which is well suited for applications that require sustained high performance, low power consumption and high capacity while maintaining cost efficiency. The device provides a 16bit-wide bus that operates at a rate of 65 MHz and processes blocks of data stored in its cell array of up to 8K words. It is well suited for memory-intensive applications such as cache mapping, networking systems, audio/video storage and transmission applications, as well as industrial systems.CYDMX128A16-65BVXI allows the user to choose from two operating modes: asynchronous or synchronous. In asynchronous mode, the device communicates with its host system via an 8-bit or 10-bit wide data bus that is clocked at a rate of up to 65MHz. In synchronous mode, the bus width is 16 bit and the data is transferred in 16-bit chunks at 65MHz. Both modes require the use of an external clock signal; however, the synchronous mode requires an additional external RAS signal.In terms of working principle, CYDMX128A16-65BVXI has an advanced memory architecture. It utilises a high-speed, low-power SRAM Cell Array with a column multiplexer and row decoder, which allows it to store data efficiently and with low latency. Moreover, the device also features two-way parity and cyclic redundancy check (CRC) for error detection.In terms of operation, the user first inputs the address and data into the device via the address and data buses. Then the device will read from or write to its cell array using the internal multiplexer and decoder. Finally, the device will send out the data or information in response to the user’s request.The CYDMX128A16-65BVXI device also has a self-refresh capability, which enables it to maintain data retention during periods of inactivity, reducing power usage and cost as compared to conventional SRAM solutions. Additionally, the device has several advanced features including temperature monitoring, voltage level shifting, dual-channel operation and multiple bank operation.In short, CYDMX128A16-65BVXI is a highly reliable and cost-effective synchronous SRAM device that is suitable for a range of application fields such as industrial, embedded, automotive and consumer applications. Its compact size and low power consumption makes it an ideal solution for cost-sensitive designs. It offers fast response times, low latency and advanced features for high-performance and reliable operation.

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