Allicdata Part #: | CZ5364BTR-ND |
Manufacturer Part#: |
CZ5364B TR |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | DIODE ZENER 33V 5W DO201 |
More Detail: | Zener Diode 33V 5W ±5% Through Hole DO-201 |
DataSheet: | CZ5364B TR Datasheet/PDF |
Quantity: | 1400 |
1400 +: | $ 0.22978 |
2800 +: | $ 0.20824 |
7000 +: | $ 0.19388 |
9800 +: | $ 0.19148 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 33V |
Tolerance: | ±5% |
Power - Max: | 5W |
Impedance (Max) (Zzt): | 10 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 25.1V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 1A |
Operating Temperature: | -65°C ~ 200°C |
Mounting Type: | Through Hole |
Package / Case: | DO-201AA, DO-27, Axial |
Supplier Device Package: | DO-201 |
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CZ5364B TR Application Field and Working Principle
Diodes - Zener - Single is a type of diode used for regulating the voltage and current. This article will focus on CZ5364B TR, a single zener diode from New Jersey Semiconductor, and discuss its applications and working principle.
Applications of CZ5364B TR
CZ5364B TR, being a single zener diode, is mainly used in voltage regulation and protection against overvoltage. With its breakover voltage of 5.6V and maximum reverse current of 500mA, it is often used for signal and voltage regulation, including but not limited to circuit designs for general electronics, audio products, and industrial control.
Working Principle of CZ5364B TR
The working principle of CZ5364B TR is based on the PN junction diode principle. It has two side connected to two terminals, an anode and a cathode. Lightly doped P-type semiconductor is connected to the anode and heavily doped N-type semiconductor is connected to the other side. When a forward bias voltage is applied across the terminals, the electric field directly beneath the junction forces the electrons away from the area and they recombine with the holes in the N-type semiconductor. This process allows current to flow through the diode, because the electric field is present in only one direction.
When a reverse bias voltage is applied, the electric field moves in the opposite direction. This makes it impossible for electric current to pass through the diode just as in the case of forward bias. The only exception to this rule is when the applied voltage crosses the zener voltage of the diode. When the reverse bias voltage is greater than the zener voltage, current passes through the diode at a constant electric field. This process is known as Zener breakdown, and it is the basis for voltage regulation.
The CZ5364B TR is a perfect example of Zener breakdown. It is much more stable than other types of diodes, including Schottky diodes, and provides better protection from over-voltage. Furthermore, CZ5364B TR is built with avalanche voltage suppression, which reduces its leakage current and makes it suitable for applications in areas close to power supplies.
Conclusion
CZ5364B TR is a single zener diode developed by New Jersey Semiconductor and is often used in circuits requiring voltage regulation and over-voltage protection. It has a breakover voltage of 5.6V and a maximum reverse current of 500mA, making it a suitable choice for various applications. Moreover, it has avalanche voltage suppression, which reduces leakage current and makes it suitable for use close to power supplies.
The specific data is subject to PDF, and the above content is for reference
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