CZRB3009-G Allicdata Electronics
Allicdata Part #:

CZRB3009-G-ND

Manufacturer Part#:

CZRB3009-G

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Comchip Technology
Short Description: DIODE ZENER 9.1V 3W DO214AA
More Detail: Zener Diode 9.1V 3W ±5% Surface Mount DO-214AA (SM...
DataSheet: CZRB3009-G datasheetCZRB3009-G Datasheet/PDF
Quantity: 1000
3000 +: $ 0.11665
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 9.1V
Tolerance: ±5%
Power - Max: 3W
Impedance (Max) (Zzt): 2.4 Ohms
Current - Reverse Leakage @ Vr: 50µA @ 7V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Description

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The CZRB3009-G from Central Semiconductor Corporation is a single Zener diode designed to provide a regulated voltage control between a source and a load. The diode has an efficient electrical configuration that ensures optimal performance in its intended application field. This article will explain the application field and working principle of the CZRB3009-G.

The CZRB3009-G is mainly used in voltage regulators and voltage references. These components are typically used to provide an output voltage that is independent of the input voltage. The diode can also be used in other applications such as DC-DC conversion, where it can provide a stable voltage that prevents excessive current flow and voltage spikes. Additionally, the diode can be used in radio frequency (RF) circuits to protect sensitive components against high voltage and lightning.

The CZRB3009-G features a breakdown voltage of 9V, with a maximum operating temperature of 175°C. This device is constructed using an efficient electrical configuration, in which a heavily-doped n-type region is adjoined to a less heavily-doped p-type region. When a voltage is applied to the diode, holes from the n-type region and electrons from the p-type region get attracted to each other, thus forming an electric current (the “reverse current”). A critical voltage point, known as the “knee voltage”, is reached when the reverse current reaches its maximum, beyond which point further increases of the forward voltage does not lead to an increase in current.

The working principle of the CZRB3009-G can also be explained in terms of “Zener Voltage”. This is a voltage level that occurs when the “vacuum” at the reverse junction of the two regions is not strong enough to fully stop the current. In such cases, the electrons of the p-type region are free to move, and the hole concentration at the junction increases exponentially. This causes the junction voltage to approach a point known as the “Zener Voltage”, at which point further increases of forward voltage do not result in an increase of current. This explains why the CZRB3009-G diode is capable of providing a stable voltage even when the source voltage fluctuates.

The CZRB3009-G from Central Semiconductor Corporation is a single Zener diode designed to provide a regulated voltage control between a source and a load. The diode has an efficient electrical configuration that ensures optimal performance in its intended application field. This device is mainly used in voltage regulators and voltage references, as well as DC-DC conversion and RF circuits. The working principle of the CZRB3009-G can be explained in terms of “Zener Voltage”, at which point further increases of forward voltage do not result in an increase of current. It features a breakdown voltage of 9V and a maximum operating temperature of 175°C, making it an ideal choice for a range of applications.

The specific data is subject to PDF, and the above content is for reference

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