CZRQR52C10-HF

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The CZRQR52C10-HF is a Silicon Zener diode with solid-state junction breakdowns, one of many such diodes available on the market. It has a wide range of applications, from general-purpose electronic components to power semiconductors.

The CZRQR52C10-HF is a monolithic, zero-voltage, thyristor-controlled, four-terminal junction breakdown device. It is constructed using an epitaxial silicon process for superior uniformity and repeatable performance. The diode is available in a variety of packages, including SOT-23, SOP-8, and SOIC-8.

This Zener diode is used to control the voltage either directly or indirectly. It can be used as a voltage regulator to regulate the output of a power supply. It can also be used as a voltage limiter to protect other components from voltage spikes. It is also used to stabilize the voltage in various types of circuits, such as op amps and oscillators. In addition, it can be used as an edge trigger in switching circuits.

The CZRQR52C10-HF has a reverse breakdown voltage of 10 V and a reverse leakage current of 3 µA. It has a power dissipation of 150 mW. The maximum junction temperature for operation is 150°C. The device is also capable of operating over a wide range of temperatures from −55 to +150°C. It is ideal for use in automatic test equipment, medical and industrial equipment, control systems, and switching applications.

The working principle of the CZRQR52C10-HF is based on the reverse-bias breakdown of a junction diode. When a voltage greater than the breakdown voltage, Vbr, is applied to the diode, the junction will break down and current will flow in the reverse direction. This current is limited by the reverse leakage current, Ir. When the applied voltage is decreased, the current will stop flowing. The breakdown voltage is determined by the thickness of the depletion layer, which is dependent on the doping concentration of the semiconductor material.

In summary, the CZRQR52C10-HF is a four-terminal, solid-state junction breakdown device used to control the voltage either directly or indirectly. It has a reverse breakdown voltage of 10 V and a reverse leakage current of 3 µA. It is suitable for use in automatic test equipment, medical and industrial equipment, control systems, and switching applications. Its working principle is based on the reverse-bias breakdown of a junction diode.

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